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2N3771G

NPN Transistor 2N3771G by ON Semiconductor

Quantity Unit Price(USD) Ext. Price
1 $3.477 $3.48
200 $1.346 $269.20
500 $1.299 $649.50
1000 $1.275 $1,275.00

Inventory:8,250

*The price is for reference only.
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Overview of 2N3771G

The 2N3771G is a silicon power transistor designed for high-power amplification and switching applications. This NPN transistor is capable of handling high current and voltage levels, making it suitable for use in power supply circuits, audio amplifiers, and motor control systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • E: Emitter
  • B: Base
  • C: Collector

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the 2N3771G transistor for a visual representation.

Key Features

  • High Power Capability: The 2N3771G can handle high power levels, making it suitable for power applications.
  • Low Saturation Voltage: This transistor exhibits low saturation voltage, reducing power dissipation and improving efficiency.
  • High Current Gain: With a high current gain, the 2N3771G enables efficient amplification in various circuits.
  • Low Thermal Resistance: The transistor has low thermal resistance, helping to dissipate heat effectively.
  • Wide Voltage and Current Ratings: The 2N3771G has wide voltage and current ratings, providing flexibility in circuit design.

Note: For detailed technical specifications, please refer to the 2N3771G datasheet.

Application

  • Power Amplification: Ideal for power amplifier circuits in audio systems, RF applications, and industrial equipment.
  • Switching Circuits: Suitable for switching applications in power supplies, motor control, and lighting systems.
  • Voltage Regulation: Used in voltage regulator circuits to maintain stable output voltages.

Functionality

The 2N3771G transistor is designed to provide high-power amplification and efficient switching capabilities in various electronic circuits. It offers reliable performance in demanding applications requiring power transistors.

Usage Guide

  • Mounting: Ensure proper heat sinking to manage the heat generated during operation for optimal performance.
  • Biasing: Connect the base terminal to the appropriate biasing circuit based on the application requirements for accurate operation.
  • Load Connection: Connect the collector and emitter pins based on the circuit configuration and load specifications.

Frequently Asked Questions

Q: Is the 2N3771G suitable for high-frequency applications?
A: The 2N3771G is primarily designed for medium power applications and may not be ideal for high-frequency operations.

Equivalent

For similar functionalities, consider these alternatives to the 2N3771G:

  • 2N3055: This is a widely used power transistor known for its high-power handling capabilities and reliability.
  • MJ15003: A high-voltage transistor suitable for power amplification and rugged applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Last Shipments Compliance PbAHP
Package Type TO-204-2 Case Outline 1-07
MSL Type NA MSL Temp (°C) 0
Container Type FTRAY Container Qty. 100
ON Target N Polarity NPN
Type General Purpose VCE(sat) Max (V) 2
IC Cont. (A) 30 VCEO Min (V) 40
VCBO (V) 50 VEBO (V) 5
VBE(on) (V) 2.7 hFE Min 15
hFE Max 60 fT Min (MHz) 0.2
PTM Max (W) 150 Pricing ($/Unit) Price N/A

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2N3771G

NPN Transistor 2N3771G by ON Semiconductor

Inventory:

8,250