• BSC077N12NS3 G 8-PowerTDFN
BSC077N12NS3 G 8-PowerTDFN

BSC077N12NS3 G

-pin TDSON EP package

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Overview of BSC077N12NS3 G

The BSC077N12NS3 G is a power MOSFET transistor designed for high-power switching applications. It features a low on-state resistance and high current capability, making it suitable for various power management needs.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Gate (G): Input for controlling the switching operation
  • Drain (D): Power output connection
  • Source (S): Ground connection
  • VSS: Substrate connection
  • VCC: Positive power supply
  • FB: Feedback pin
  • VB: Half-bridge output
  • VS: Half-bridge output

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the BSC077N12NS3 G MOSFET for better understanding.

Key Features

  • High Power Switching: Capable of handling high power levels for efficient switching applications.
  • Low On-State Resistance: The MOSFET offers low resistance to minimize power losses during operation.
  • High Current Capability: Able to carry significant current for demanding power requirements.
  • Fast Switching Speed: Provides rapid switching transitions for effective power management.
  • Robust Design: Built to withstand high voltages and currents for reliable performance.

Note: For detailed technical specifications, please refer to the BSC077N12NS3 G datasheet.

Application

  • Power Management Systems: Ideal for use in power management systems, including DC-DC converters and motor control.
  • Switching Circuits: Suitable for various electronic switching circuits requiring high power handling.
  • Inverter Applications: Used in inverter systems for converting DC power to AC power efficiently.

Functionality

The BSC077N12NS3 G MOSFET is designed to efficiently switch high power loads in electronic systems, providing a reliable and effective solution for power management requirements.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the Gate pin to control the switching operation.
  • Power Connections: Connect the Drain pin to the power output and the Source pin to the ground.
  • Feedback Pin: Utilize the FB pin for applications requiring feedback or control circuits.

Frequently Asked Questions

Q: Is the BSC077N12NS3 G suitable for high-frequency applications?
A: Yes, the BSC077N12NS3 G offers fast switching speeds, making it suitable for high-frequency operation in certain applications.

Equivalent

For similar functionalities, consider these alternatives to the BSC077N12NS3 G:

  • Alternative1: Description of alternative 1.
  • Alternative2: Description of alternative 2.

BSC077N12NS3 G

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series OptiMOS™ Product Status Active
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 120 V Current - Continuous Drain (Id) @ 25°C 13.4A (Ta), 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 7.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 110µA Gate Charge (Qg) (Max) @ Vgs 88 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5700 pF @ 60 V
Power Dissipation (Max) 139W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package PG-TDSON-8-1
Package / Case 8-PowerTDFN Base Product Number BSC077

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