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SUP53P06-20-E3

VISHAY SUP53P06-20-E3 Power MOSFET, P-Channel

Inventory:8,602

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Please submit RFQ for SUP53P06-20-E3 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of SUP53P06-20-E3

P-Channel 60 V 9.2A (Ta), 53A (Tc) 3.1W (Ta), 104.2W (Tc) Through Hole TO-220AB

Key Features

  • TrenchFET® power MOSFET
  • 100 % UIS tested
  • Material categorization:for definitions of compliance please see www.vishay.com/doc?99912

    • Application

    • Power Management

    Specifications

    The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

    Product Category MOSFET RoHS Details
    REACH Details Technology Si
    Mounting Style Through Hole Package / Case TO-220-3
    Transistor Polarity P-Channel Number of Channels 1 Channel
    Vds - Drain-Source Breakdown Voltage 60 V Id - Continuous Drain Current 53 A
    Rds On - Drain-Source Resistance 16 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
    Vgs th - Gate-Source Threshold Voltage 3 V Qg - Gate Charge 115 nC
    Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
    Pd - Power Dissipation 104.2 W Channel Mode Enhancement
    Tradename TrenchFET Series SUP
    Brand Vishay Semiconductors Configuration Single
    Fall Time 40 ns Forward Transconductance - Min 20 S
    Product Type MOSFET Rise Time 7 ns
    Factory Pack Quantity 500 Subcategory MOSFETs
    Transistor Type 1 P-Channel Typical Turn-Off Delay Time 70 ns
    Typical Turn-On Delay Time 10 ns Unit Weight 0.068784 oz

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    Warranty, Returns, and Additional Information

    • QA & Return Policy

      Parts Quality Guarantee: 365 days

      Returns for refund: within 90 days

      Returns for Exchange: within 90 days

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