NAND256W3A2BN6E
SLC NAND Flash Parallel 3V/3.3V 256M-bit 32M x 8 12us 48-Pin TSOP Tray
Inventory:6,407
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : NAND256W3A2BN6E
-
Package/Case : TFSOP-48
-
Brands : Stmicroelectronics
-
Components Categories : Memory
-
Datesheet : NAND256W3A2BN6E DataSheet (PDF)
Overview of NAND256W3A2BN6E
FLASH - NAND Memory IC 256Mbit Parallel 50 ns 48-TSOP
Key Features
- HIGH DENSITY NAND FLASH MEMORIES
- – Up to 1 Gbit memory array
- – Up to 32 Mbit spare area
- – Cost effective solutions for mass storage applications
- NAND INTERFACE
- – x8 or x16 bus width
- – Multiplexed Address/ Data
- – Pinout compatibility for all densities
- SUPPLY VOLTAGE
- – 1.8V device: VDD = 1.7 to 1.95V
- – 3.0V device: VDD = 2.7 to 3.6V
- PAGE SIZE
- – x8 device: (512 + 16 spare) Bytes
- – x16 device: (256 + 8 spare) Words
- BLOCK SIZE
- – x8 device: (16K + 512 spare) Bytes
- – x16 device: (8K + 256 spare) Words
- PAGE READ / PROGRAM
- – Random access: 12µs (max)
- – Sequential access: 50ns (min)
- – Page program time: 200µs (typ)
- COPY BACK PROGRAM MODE
- – Fast page copy without external buffering
- FAST BLOCK ERASE
- – Block erase time: 2ms (Typ)
- STATUS REGISTER
- ELECTRONIC SIGNATURE
- CHIP ENABLE ‘DON’T CARE’ OPTION
- – Simple interface with microcontroller
- SERIAL NUMBER OPTION
- HARDWARE DATA PROTECTION
- – Program/Erase locked during Power transitions
- DATA INTEGRITY
- – 100,000 Program/Erase cycles
- – 10 years Data Retention
- RoHS COMPLIANCE
- – Lead-Free Components are Compliant with the RoHS Directive
- DEVELOPMENT TOOLS
- – Error Correction Code software and hardware models
- – Bad Blocks Management and Wear Leveling algorithms
- – File System OS Native reference software
- – Hardware simulation models
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | NAND Flash | RoHS | Details |
Mounting Style | SMD/SMT | Package / Case | TSOP-48 |
Series | NAND256-A | Memory Size | 256 Mbit |
Interface Type | Parallel | Organization | 32 M x 8 |
Timing Type | Asynchronous | Data Bus Width | 8 bit |
Supply Voltage - Min | 2.7 V | Supply Voltage - Max | 3.6 V |
Supply Current - Max | 20 mA | Minimum Operating Temperature | - 40 C |
Maximum Operating Temperature | + 85 C | Active Read Current - Max | 20 mA |
Architecture | Multiplane | Brand | STMicroelectronics |
Memory Type | NAND | Moisture Sensitive | Yes |
Product | NAND Flash | Product Type | NAND Flash |
Speed | 50 ns | Standard | Not Supported |
Factory Pack Quantity | 96 | Subcategory | Memory & Data Storage |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, SF, UPS, or DHL.UPS, or DHL.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA, MasterCard, UnionPay, Western Union, PayPal, and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
Similar Product
NAND01GR3B2CZA6E
NAND Flash Parallel 1.8V 1G-bit 128M x 8 25us 63-Pin VFBGA Tray
NAND256W3A2BN6F
NAND Flash NAND 256 MEG
NAND512W3A2BN6E
SLC NAND Flash Parallel 3V/3.3V 512M-bit 64M x 8 12us 48-Pin TSOP Tube
NAND512W3A2SN6F
SLC NAND Flash Parallel 3V/3.3V 512M-bit 64M x 8 12us 48-Pin TSOP T/R
NAND512W3A2SN6E
FLASH - NAND Memory IC 512Mbit Parallel 50 ns 48-TSOP
NAND512W3A2BZA6E
FLASH - NAND Memory IC 512Mbit Parallel 50 ns 63-VFBGA (8.5x15)
M29W640GH70NA6E
FLASH - NOR Memory IC 64Mbit Parallel 70 ns 48-TSOP I
MTFC8GAMALNA-AIT
Managed NAND Flash Serial e-MMC 3.3V 64G-bit 64G/16G/8G x 1/4-bit/8-bit Automotive AEC-Q104 100-Pin TBGA Tray