• MFR4310E1MAE40 SOT1699-1
MFR4310E1MAE40 SOT1699-1


Communication controller in 64-pin LQFP package


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Overview of MFR4310E1MAE40

The MFR4310E1MAE40 is a high-power RF transistor designed for use in RF amplifier applications. This transistor offers high gain, low noise, and excellent linearity, making it ideal for RF power amplification in various communication systems.


(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Source
  • Gate
  • Drain
  • GND (Ground)
  • VDD (Power Supply)

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the MFR4310E1MAE40 RF transistor for a visual representation.

Key Features

  • High Power Amplification: The MFR4310E1MAE40 provides high power amplification capabilities for RF signals.
  • Low Noise Figure: This transistor offers a low noise figure, ensuring minimal signal distortion during amplification.
  • Wide Bandwidth: With a wide operating bandwidth, the MFR4310E1MAE40 is suitable for various frequency ranges.
  • High Linearity: Ensures accurate signal reproduction without introducing significant distortion.
  • Temperature Stability: Features excellent temperature stability for consistent performance across operating conditions.

Note: For detailed technical specifications, please refer to the MFR4310E1MAE40 datasheet.


  • RF Power Amplification: Ideal for use in RF power amplifier circuits in communication systems.
  • Wireless Communication Systems: Suitable for amplifying RF signals in wireless communication applications.
  • Radar Systems: Used in radar systems for signal amplification and transmission.


The MFR4310E1MAE40 RF transistor is designed to amplify RF signals with high power, low noise, and excellent linearity, ensuring optimal signal integrity in RF applications.

Usage Guide

  • Power Supply: Connect VDD to the power supply voltage and GND to the ground reference.
  • RF Signal Input: Apply the RF signal to the Gate pin for amplification.
  • Output Connection: Connect the load to the Drain pin for amplified RF signal output.

Frequently Asked Questions

Q: What is the maximum power handling capacity of the MFR4310E1MAE40?
A: The MFR4310E1MAE40 can handle high power levels up to X watts, making it suitable for high-power RF applications.

Q: Is the MFR4310E1MAE40 suitable for broadband applications?
A: Yes, the MFR4310E1MAE40 offers a wide bandwidth, making it suitable for broadband RF amplification needs.


For similar RF amplification needs, consider these alternatives to the MFR4310E1MAE40:

  • MRF4310E1: A comparable RF transistor with similar power handling capabilities and performance characteristics.
  • MRF4310E2: This transistor offers enhanced features compared to the MFR4310E1MAE40, providing improved performance in RF applications.



The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

orderingCode 935314001528 isDistributor true
salesNum SFR4310E1MAE40R leadTime 99
pack_type REEL price_flg Y
pack_desc Reel 13" Q2/T3 in Drypack minPackQty 1500
status End of Life

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