• IRF420 TO-3
IRF420 TO-3

IRF420

N-channel enhancement-mode transistor ideal for high-voltage, high-frequency switching circuit

Inventory:4,904

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Overview of IRF420

The IRF420 is a Power Field-Effect Transistor optimized for high-speed and low-voltage operations. It provides excellent performance for specific applications, such as analog and digital signal switching.

Pinout

The IRF420 pinout refers to the configuration and function of each pin in its TO-204AA package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the IRF420 has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • I(D) of 2.5A: The IRF420 has a maximum current rating of 2.5 amps, making it suitable for demanding applications.
  • V(DSS) of 500V: This power transistor can withstand a maximum voltage of 500 volts, ensuring reliable operation in high-voltage circuits.
  • RDS(on) of 3ohm: The IRF420 has a low on-resistance of 3 ohms, reducing energy losses and heat generation during switching operations.
  • 1-Element N-Channel: This power transistor is designed as a single-element device with an N-channel structure, making it suitable for various applications.
  • Silicon Metal-Oxide Semiconductor FET: The IRF420 uses silicon metal-oxide semiconductor technology to ensure high performance and reliability in harsh environments.

Applications

  • Analog and Digital Signal Switching: The IRF420 is suitable for switching analog and digital signals in various applications, including audio amplifiers, motor control circuits, and power supplies.

Equivalents

For similar functionalities, consider these alternatives to the IRF420:

  • IRFZ44N: This power transistor has a similar configuration and performance characteristics as the IRF420.
  • FETs from other manufacturers: Other manufacturers may offer equivalent or similar power transistors with different specifications and features.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code No Part Life Cycle Code Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR Package Description FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code ECCN Code EAR99
HTS Code 8541.29.00.95 Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 500 V
Drain Current-Max (Abs) (ID) 2.5 A Drain Current-Max (ID) 2.5 A
Drain-source On Resistance-Max 3 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204AA JESD-30 Code O-MBFM-P2
JESD-609 Code e0 Number of Elements 1
Number of Terminals 2 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Package Body Material METAL
Package Shape ROUND Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL Power Dissipation Ambient-Max 50 W
Power Dissipation-Max (Abs) 50 W Pulsed Drain Current-Max (IDM) 10 A
Qualification Status Not Qualified Surface Mount NO
Terminal Finish TIN LEAD Terminal Form PIN/PEG
Terminal Position BOTTOM Transistor Application SWITCHING
Transistor Element Material SILICON Turn-off Time-Max (toff) 60 ns
Turn-on Time-Max (ton) 33 ns

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IRF420

N-channel enhancement-mode transistor ideal for high-voltage, high-frequency switching circuit

Inventory:

4,904