• IKW40N120T2 TO-247
IKW40N120T2 TO-247

IKW40N120T2

Trans IGBT Chip N-CH 1200V 75A 480W 3-Pin(3+Tab) TO-247 Tube

Quantity Unit Price(USD) Ext. Price
1 $4.226 $4.23
10 $3.701 $37.01
30 $3.079 $92.37
90 $2.765 $248.85
480 $2.619 $1,257.12
960 $2.555 $2,452.80

Inventory:6,648

*The price is for reference only.
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Overview of IKW40N120T2

IKW40N120T2 is an IGBT Transistors optimized for low loss operation and high efficiency. It provides excellent performance for powering high-voltage DC-DC converters, motor drives, and other demanding applications.

Pinout

The IKW40N120T2 pinout refers to the configuration and function of each pin in its TO-247-3 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the IKW40N120T2 has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • Lowest VCEsat drop for lower conduction losses: Provides significant energy savings and helps reduce heat generation.
  • Low switching losses: Enables fast switching frequencies and minimizes power consumption during operation.
  • Easy parallel switching capability due to positive temperature coefficient in VCEsat: Simplifies the design of parallel circuits and reduces complexity.
  • Very soft, fast recovery anti-parallel Emitter Controlled diode: Offers low switching losses and soft turn-off characteristics for improved overall performance.
  • High ruggedness, temperature stable behavior: Provides robust operation over a wide range of temperatures and fault modes.
  • Low EMI emissions: Minimizes electromagnetic interference and ensures reliable operation in complex systems.
  • Low gate charge: Simplifies the design of drive circuits and reduces power consumption during operation.
  • Very tight parameter distribution: Ensures high device reliability and consistent performance across a wide range of operating conditions.
  • Highest efficiency – low conduction and switching losses: Provides energy savings, reduced heat generation, and long-term device reliability.
  • Comprehensive portfolio in 600 V and 1200 V for flexibility of design: Offers a broad range of products to match specific system requirements.
  • High device reliability: Assures consistent performance, low failure rates, and reduced maintenance costs over the product's lifetime.

Applications

  • Motor drives for industrial automation and robotics: Used in high-power motor control applications requiring precise speed and position control.
  • Powersupply and DC-DC converters in telecommunications equipment: Provides reliable power conversion with low noise and high efficiency.
  • Traction systems for electric vehicles: Used in high-performance traction motors and converters, enabling efficient acceleration, deceleration, and regenerative braking.

Advantages and Disadvantages

Advantages

  • Low power losses and high efficiency for reduced energy consumption: Minimizes heat generation and optimizes system performance.
  • Tight parameter distribution ensures device reliability: Provides consistent performance across a wide range of operating conditions.
  • Simplified design and commissioning: Leveraging the IC's integrated features simplifies the overall system design and reduces the risk of errors during development.

Disadvantages

  • Potential high upfront investment cost for a high-quality device: While long-term benefits justify this cost, initial investments may be significant.
  • Requires deep knowledge of IGBT characteristics and application specific details in the design process: Ensures optimal operation but demands comprehensive understanding of the IC's performance and limitations.

Equivalents

For similar functionalities, consider these alternatives to the IKW40N120T2:

  • AUIRS20G120Q1TR
  • NTHF50L60ND
  • STP75NF65R

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer Infineon Product Category IGBT Transistors
RoHS Details Technology Si
Package / Case TO-247-3 Mounting Style Through Hole
Configuration Single Collector- Emitter Voltage VCEO Max 1.2 kV
Collector-Emitter Saturation Voltage 1.75 V Maximum Gate Emitter Voltage - 20 V, + 20 V
Continuous Collector Current at 25 C 75 A Pd - Power Dissipation 480 W
Minimum Operating Temperature - 40 C Maximum Operating Temperature + 175 C
Series Trenchstop IGBT2 Brand Infineon Technologies
Gate-Emitter Leakage Current 200 nA Height 20.9 mm
Length 15.9 mm Product Type IGBT Transistors
Factory Pack Quantity 240 Subcategory IGBTs
Tradename TRENCHSTOP Width 5.03 mm
Part # Aliases IKW4N12T2XK SP000244962 IKW40N120T2FKSA1 Unit Weight 1.340411 oz

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IKW40N120T2

Trans IGBT Chip N-CH 1200V 75A 480W 3-Pin(3+Tab) TO-247 Tube

Inventory:

6,648