FCP22N60N
2N60N, MOSFET, N-channel, TO-220, Tube
Inventory:6,141
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- 365 Days Quality Guarantee
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Part Number : FCP22N60N
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Package/Case : TO-220-3
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Brands : onsemi
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Components Categories : Single FETs, MOSFETs
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Datesheet : FCP22N60N DataSheet (PDF)
Overview of FCP22N60N
Experience the future of power electronics with the FCP22N60N SupreMOS MOSFET, a game-changer in high voltage super-junction technology. Through its advanced deep trench filling process, this MOSFET achieves the industry's lowest on-resistance, delivering superior performance and reliability for high frequency switching applications. From FPD TV power supplies to ATX power units, the FCP22N60N is the ideal choice for demanding power converter setups where efficiency and ruggedness are essential. Trust in the innovative design and precise control of SupreMOS technology to elevate your power management solutions to new heights
Key Features
- BVDSS = 650V @ TJ = 150°C
- RDS(on) = 140mΩ ( Typ.) @ VGS = 10V, ID = 11A
- Ultra low gate charge ( Typ. Qg = 45nC )
- Low effective output capacitance ( Typ. Coss.eff = 196.4pF )
- 100% avalanche tested
- RoHS compliant
Application
- Reliable for diverse needs
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | Through Hole | Package / Case | TO-220-3 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 600 V | Id - Continuous Drain Current | 22 A |
Rds On - Drain-Source Resistance | 140 mOhms | Vgs - Gate-Source Voltage | - 30 V, + 30 V |
Vgs th - Gate-Source Threshold Voltage | 2 V | Qg - Gate Charge | 45 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 205 W | Channel Mode | Enhancement |
Tradename | SupreMOS | Series | FCP22N60N |
Brand | onsemi / Fairchild | Configuration | Single |
Fall Time | 4 ns | Forward Transconductance - Min | 22 S |
Height | 16.3 mm | Length | 10.67 mm |
Product Type | MOSFET | Rise Time | 16.7 ns |
Factory Pack Quantity | 1000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Type | SupreMOS |
Typical Turn-Off Delay Time | 49 ns | Typical Turn-On Delay Time | 16.9 ns |
Width | 4.7 mm | Unit Weight | 0.068784 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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