DRV8705HQRHBRQ1

The DRV8705-Q1 is a state-of-the-art H-bridge gate driver that offers a high level of integration for driving N-channel power MOSFETs. With its integrated doubler charge pump for the high-side and linear regulator for the low-side, this device simplifies the design process and reduces overall system cost

Key Features

• AEC-Q100 qualified for automotive applications:
  • Temperature grade 1: –40°C to +125°C, T_A
• Functional Safety-Capable
  • Documentation available to aid functional safety system design
• H-bridge smart gate driver
  • 4.9-V to 37-V (40-V abs. max) operating range
  • Doubler charge pump for 100% PWM
  • Half-bridge and H-bridge control modes
• Pin to pin gate driver variants
  • DRV8106-Q1: Half-bridge with inline amplifier
  • DRV8706-Q1: H-bridge with inline amplifier
• Smart gate drive architecture
  • Adjustable slew rate control
  • 0.5-mA to 62-mA peak source current output
  • 0.5-mA to 62-mA peak sink current output
  • Integrated dead-time handshaking
• Low-side current shunt amplifier
  • Adjustable gain settings (10, 20, 40, 80 V/V)
  • Integrated feedback resistors
  • Adjustable PWM blanking scheme
• Multiple interface options available
  • SPI: Detailed configuration and diagnostics
  • H/W: Simplified control and less MCU pins
• Spread spectrum clocking for EMI reduction
• Compact VQFN package with wettable flanks
• Integrated protection features
  • Dedicated driver disable pin (DRVOFF)
  • Supply and regulator voltage monitors
  • MOSFET V_DS overcurrent monitors
  • MOSFET V_GS gate fault monitors
  • Charge pump for reverse polarity MOSFET
  • Offline open load and short circuit diagnostics
  • Device thermal warning and shutdown
  • Fault condition interrupt pin (nFAULT)