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DD171N14K

Single-phase Rectifier Diode with 2 Elements

Inventory:6,834

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Overview of DD171N14K

The Infineon Technologies DD171N14K is a high power microwave transistor optimized for L-Band operation with a minimum output power of 170W. It provides excellent performance for demanding RF systems, offering wide matching bandwidth and high thermal conductivity.

Pinout

The DD171N14K pinout refers to the configuration and function of each pin in its module package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the DD171N14K has a specific role such as power supply input, ground connection, or signal interface.

Features

  • High Power Microwave Transistor: The DD171N14K is designed for high-power microwave applications with a minimum output power of 170W.
  • L-Band Operation: This transistor operates in the L-Band frequency range, making it suitable for radar and RF applications.
  • Wide Matching Bandwidth: The DD171N14K offers a wide matching bandwidth, ensuring optimal performance in various system configurations.
  • High Thermal Conductivity: This transistor features high thermal conductivity, allowing it to efficiently dissipate heat and maintain stable operation.
  • Excellent Linearity and Efficiency: The DD171N14K provides excellent linearity and efficiency for demanding RF systems, ensuring reliable performance in various applications.

Applications

  • Motor Control Systems: The DD171N14K is suitable for high-power motor control systems that require precise control and efficient operation.
  • Power Supplies: This transistor can be used in high-power power supplies that demand reliable and efficient performance.
  • Induction Heating Equipment: The DD171N14K is suitable for induction heating equipment that requires precise control and high power handling capabilities.
  • Welding Equipment: This transistor can be used in welding equipment that demands reliable and efficient performance under high-power conditions.
  • UPS Systems: The DD171N14K is suitable for uninterruptible power supply (UPS) systems that require precise control and high power handling capabilities.
  • Electric Vehicle Charging Systems: This transistor can be used in electric vehicle charging systems that demand reliable and efficient performance under high-power conditions.
  • Renewable Energy Systems: The DD171N14K is suitable for renewable energy systems that require precise control and high power handling capabilities.
  • Industrial Automation: This transistor can be used in industrial automation applications that demand reliable and efficient performance under high-power conditions.
  • Medical Equipment: The DD171N14K is suitable for medical equipment that requires precise control and high power handling capabilities.
  • Telecommunication Systems: This transistor can be used in telecommunication systems that demand reliable and efficient performance under high-power conditions.

Advantages and Disadvantages

Advantages

  • High Power Handling Capability: The DD171N14K can handle high power levels, making it suitable for demanding applications.
  • Excellent Linearity and Efficiency: This transistor provides excellent linearity and efficiency, ensuring reliable performance in various applications.
  • Wide Matching Bandwidth: The DD171N14K offers a wide matching bandwidth, allowing it to operate efficiently in various system configurations.

Disadvantages

  • High Cost: The DD171N14K is a high-end transistor with a higher cost compared to other options on the market.
  • Complex Design Requirements: This transistor requires complex design and implementation, which can be challenging for some users.

Equivalents

  • Infineon Technologies BLC880: The Infineon Technologies BLC880 is a similar high-power microwave transistor that offers excellent performance in demanding applications.
  • NXP Semiconductors NPTX100: The NXP Semiconductors NPTX100 is another high-power microwave transistor that provides reliable and efficient performance under high-power conditions.

Frequently Asked Questions

Q: What is the minimum output power of the DD171N14K?
A: The minimum output power of the DD171N14K is 170W.

Q: What frequency range does the DD171N14K operate in?
A: The DD171N14K operates in the L-Band frequency range, which is suitable for radar and RF applications.

Q: What are the advantages of using the DD171N14K?
A: The DD171N14K offers high power handling capability, excellent linearity and efficiency, and a wide matching bandwidth, making it suitable for demanding applications.

Q: Are there any disadvantages to using the DD171N14K?
A: Yes, the DD171N14K is a high-end transistor with a higher cost compared to other options on the market. Additionally, it requires complex design and implementation, which can be challenging for some users.

Q: Are there any equivalents to the DD171N14K?
A: Yes, there are several alternatives to the DD171N14K, including the Infineon Technologies BLC880 and the NXP Semiconductors NPTX100, which offer similar performance characteristics.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series DD171N Package Bulk
Product Status Obsolete Diode Configuration 1 Pair Common Cathode
Technology Standard Voltage - DC Reverse (Vr) (Max) 1400 V
Current - Average Rectified (Io) (per Diode) 171A Voltage - Forward (Vf) (Max) @ If 1.26 V @ 500 A
Speed Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr 20 mA @ 1400 V
Operating Temperature - Junction -40°C ~ 150°C Mounting Type Chassis Mount
Package / Case Module Supplier Device Package Module
Base Product Number DD171N14

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DD171N14K

Single-phase Rectifier Diode with 2 Elements

Inventory:

6,834