CAS325M12HM2
1.2 KV 325A HI-PERF SIL CRB HALF
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Part Number : CAS325M12HM2
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Package/Case : Module
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Brands : Wolfspeed, Inc.
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Components Categories : FET, MOSFET Arrays
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Datesheet : CAS325M12HM2 DataSheet (PDF)
Overview of CAS325M12HM2
The CAS325M12HM2 is an advanced high-frequency, high-power GaN RF power transistor that stands out for its superior performance in power amplification applications. Operating within the frequency range of 3200-3600 MHz, this transistor boasts an impressive peak output power of 1250 watts, complemented by a gain of 11.5 dB. Its compact form factor and robust build make it an ideal choice for military and commercial radar systems, satellite communication setups, and various other high-power RF applications
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | Discrete Semiconductor Modules | RoHS | Details |
Product | Power MOSFET Modules | Type | H-Bridge MOSFET Module |
Technology | SiC | Vf - Forward Voltage | 2.5 V |
Vgs - Gate-Source Voltage | - 5 V, 23 V | Mounting Style | Screw Mount |
Package / Case | Module | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Brand | Wolfspeed |
Configuration | Half-Bridge | Height | 10 mm |
Id - Continuous Drain Current | 444 A | If - Forward Current | 350 A |
Length | 110 mm | Number of Channels | 2 Channel |
Pd - Power Dissipation | 3 kW | Product Type | Discrete Semiconductor Modules |
Rds On - Drain-Source Resistance | 7.6 mOhms | Factory Pack Quantity | 1 |
Subcategory | Discrete Semiconductor Modules | Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 1.2 kV | Vgs th - Gate-Source Threshold Voltage | 2 V |
Width | 65 mm | Unit Weight | 8.782410 oz |
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