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CAS325M12HM2

1.2 KV 325A HI-PERF SIL CRB HALF

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Overview of CAS325M12HM2

The CAS325M12HM2 is an advanced high-frequency, high-power GaN RF power transistor that stands out for its superior performance in power amplification applications. Operating within the frequency range of 3200-3600 MHz, this transistor boasts an impressive peak output power of 1250 watts, complemented by a gain of 11.5 dB. Its compact form factor and robust build make it an ideal choice for military and commercial radar systems, satellite communication setups, and various other high-power RF applications

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Discrete Semiconductor Modules RoHS Details
Product Power MOSFET Modules Type H-Bridge MOSFET Module
Technology SiC Vf - Forward Voltage 2.5 V
Vgs - Gate-Source Voltage - 5 V, 23 V Mounting Style Screw Mount
Package / Case Module Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Brand Wolfspeed
Configuration Half-Bridge Height 10 mm
Id - Continuous Drain Current 444 A If - Forward Current 350 A
Length 110 mm Number of Channels 2 Channel
Pd - Power Dissipation 3 kW Product Type Discrete Semiconductor Modules
Rds On - Drain-Source Resistance 7.6 mOhms Factory Pack Quantity 1
Subcategory Discrete Semiconductor Modules Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 1.2 kV Vgs th - Gate-Source Threshold Voltage 2 V
Width 65 mm Unit Weight 8.782410 oz

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