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BCV61C

High-quality transistor perfect for small signal application

Inventory:6,198

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Overview of BCV61C

DESCRIPTION NPN double transistor in a SOT143B plastic package. PNP complement: BCV62.FEATURES • Low current (max. 100 mA) • Low voltage (max. 30 V) • Matched pairs.APPLICATIONS • For use in applications where the working point must be independent of temperature • Current mirrors.

Key Features

  • Low current (max. 100 mA)
  • Low voltage (max. 30 V)
  • Matched pairs.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid BCV61C Rohs Code Yes
Part Life Cycle Code Active Ihs Manufacturer NEXPERIA
Package Description SMALL OUTLINE, R-PDSO-G4 Reach Compliance Code compliant
ECCN Code EAR99 Date Of Intro 1993-10-01
Samacsys Manufacturer Nexperia Additional Feature FOR TRANSISTOR2 HFE IS 420
Case Connection COLLECTOR Collector Current-Max (IC) 0.1 A
Collector-Emitter Voltage-Max 30 V Configuration COMMON BASE, 2 ELEMENTS
DC Current Gain-Min (hFE) 420 JESD-30 Code R-PDSO-G4
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 2 Number of Terminals 4
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN Reference Standard AEC-Q101
Surface Mount YES Terminal Finish TIN
Terminal Form GULL WING Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30 Transistor Element Material SILICON
Transition Frequency-Nom (fT) 100 MHz

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