• 2N3583 TO-66-2
2N3583 TO-66-2

2N3583

Trans GP BJT NPN 175V 1A 35000mW 3-Pin(2+Tab) TO-66 Tray

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Overview of 2N3583

The 2N3583 is a high-power silicon NPN transistor designed for use in high-frequency amplifier and oscillator circuits. It offers high performance and reliability in RF applications, making it a popular choice among electronics enthusiasts and professionals.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Emitter (E): Emitter terminal
  • Base (B): Base terminal
  • Collector (C): Collector terminal

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the 2N3583 transistor for a visual representation.

Key Features

  • High Power Handling Capability: The 2N3583 can handle high power levels, making it suitable for high-frequency applications that require power amplification.
  • Low Noise Figure: This transistor offers low noise performance, enhancing the signal-to-noise ratio in RF systems.
  • Wide Frequency Range: With its high-frequency capabilities, the 2N3583 is ideal for applications across a wide frequency spectrum.
  • High Gain: The transistor provides high voltage and current gain, enabling efficient signal amplification.

Note: For detailed technical specifications, please refer to the 2N3583 datasheet.

Application

  • RF Amplification: Suitable for use in high-frequency RF amplification circuits in communication systems.
  • Oscillator Circuits: Ideal for oscillator applications requiring stable and reliable performance.
  • Broadcasting: Used in broadcasting equipment for signal amplification and modulation purposes.

Functionality

The 2N3583 transistor is designed to amplify RF signals with high power handling capabilities and low noise figure, making it a valuable component in RF circuits.

Usage Guide

  • Biasing: Proper biasing of the base terminal is essential for optimal performance.
  • Heat Dissipation: Ensure proper heat sinking for the transistor to prevent overheating during operation.
  • Matching Impedances: Match input and output impedances for maximum power transfer and efficiency.

Frequently Asked Questions

Q: Is the 2N3583 suitable for VHF applications?
A: Yes, the 2N3583 is commonly used in VHF applications due to its high-frequency performance.

Equivalent

For similar functionalities, consider these alternatives to the 2N3583:

  • 2N3866: A high-power NPN transistor with similar characteristics to the 2N3583.
  • 2N918: This transistor offers high-frequency performance and can be used as an alternative to the 2N3583.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Bipolar Transistors - BJT RoHS N
Mounting Style Through Hole Package / Case TO-66-2
Brand Microchip Technology Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 1 Subcategory Transistors
Technology Si

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