2N3583
Trans GP BJT NPN 175V 1A 35000mW 3-Pin(2+Tab) TO-66 Tray
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Part Number : 2N3583
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Package/Case : TO-66-2
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Brands : MICROCHIP
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Components Categories : Single Bipolar Transistors
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Datesheet : 2N3583 DataSheet (PDF)
The 2N3583 is a high-power silicon NPN transistor designed for use in high-frequency amplifier and oscillator circuits. It offers high performance and reliability in RF applications, making it a popular choice among electronics enthusiasts and professionals. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the 2N3583 transistor for a visual representation. Note: For detailed technical specifications, please refer to the 2N3583 datasheet. Functionality The 2N3583 transistor is designed to amplify RF signals with high power handling capabilities and low noise figure, making it a valuable component in RF circuits. Usage Guide Q: Is the 2N3583 suitable for VHF applications? For similar functionalities, consider these alternatives to the 2N3583:Overview of 2N3583
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the 2N3583 is commonly used in VHF applications due to its high-frequency performance.Equivalent
![](/files/uploads/product/b/b8ea5255af9d4c6cba23f89fb4791fa0.webp)
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | Bipolar Transistors - BJT | RoHS | N |
Mounting Style | Through Hole | Package / Case | TO-66-2 |
Brand | Microchip Technology | Product Type | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1 | Subcategory | Transistors |
Technology | Si |
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