• 2N3441 TO-66-2
2N3441 TO-66-2

2N3441

Trans GP BJT NPN 140V 3A 25000mW 3-Pin(2+Tab) TO-66

Quantity Unit Price(USD) Ext. Price
1 $71.369 $71.37
200 $27.619 $5,523.80
500 $26.649 $13,324.50
1000 $26.168 $26,168.00

Inventory:5,519

*The price is for reference only.
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Overview of 2N3441

The 2N3441 is a silicon PNP transistor primarily used for high-power amplification and switching applications. With a maximum collector-emitter voltage of 300V and a collector current of 10A, this transistor is well-suited for various power control and amplification tasks.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Emitter (E): Current flows out through the emitter terminal.
  • Base (B): Used to control the flow of current between the emitter and collector.
  • Collector (C): Collects the current from the emitter-collector path.

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the 2N3441 transistor for a visual representation.

Key Features

  • High Voltage and Current Ratings: The 2N3441 can handle high voltages up to 300V and currents up to 10A, making it suitable for high-power applications.
  • Low Saturation Voltage: This transistor has a low saturation voltage, ensuring minimal power dissipation and high efficiency in switching operations.
  • Fast Switching Speed: With fast switching characteristics, the 2N3441 enables quick response times in amplification and switching circuits.
  • Robust Construction: Designed for rugged environments, the 2N3441 offers durability and reliability in diverse operating conditions.

Note: For detailed technical specifications, please refer to the 2N3441 transistor datasheet.

Application

  • Power Amplification: Ideal for power amplification applications in audio amplifiers, power supplies, and motor control circuits.
  • Switching Circuits: Suitable for high-power switching applications such as relay drivers, motor control, and inverters.
  • Voltage Regulation: Used in voltage regulator circuits to stabilize and control voltage levels in electronic systems.

Functionality

The 2N3441 PNP transistor is designed for high-power amplification and switching tasks, providing efficient control over large currents and voltages in electronic circuits.

Usage Guide

  • Emitter Connection: Connect the load to the emitter terminal (E) to allow current to flow through the transistor.
  • Base Control: Apply the proper voltage or current to the base terminal (B) to control the transistor's conductivity and switching operations.
  • Collector Load: Connect the collector terminal (C) to the load to collect the current amplified or switched by the transistor.

Frequently Asked Questions

Q: What is the maximum voltage rating of the 2N3441 transistor?
A: The 2N3441 can withstand a maximum collector-emitter voltage of 300V.

Q: Is the 2N3441 suitable for high-current applications?
A: Yes, the 2N3441 transistor is capable of handling significant collector currents up to 10A, making it ideal for high-power tasks.

Equivalent

For similar functionalities, consider these alternatives to the 2N3441:

  • 2N2907: A complementary PNP transistor with lower power ratings but suitable for general-purpose applications.
  • 2N3906: This PNP transistor is commonly used for low-power amplification and switching tasks in electronic circuits.

2N3441

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Bipolar Transistors - BJT RoHS N
Mounting Style Through Hole Package / Case TO-66-2
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 140 V Collector- Base Voltage VCBO 160 V
Emitter- Base Voltage VEBO 7 V Collector-Emitter Saturation Voltage 1 V
Maximum DC Collector Current 3 A Pd - Power Dissipation 3 W
Minimum Operating Temperature - 65 C Maximum Operating Temperature + 200 C
Brand Microchip Technology DC Collector/Base Gain hfe Min 25 at 500 mA, 4 VDC
DC Current Gain hFE Max 100 at 500 mA, 4 VDC Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 1 Subcategory Transistors
Technology Si

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