2N3441
Trans GP BJT NPN 140V 3A 25000mW 3-Pin(2+Tab) TO-66
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $71.369 | $71.37 |
200 | $27.619 | $5,523.80 |
500 | $26.649 | $13,324.50 |
1000 | $26.168 | $26,168.00 |
Inventory:5,519
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Part Number : 2N3441
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Package/Case : TO-66-2
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Brands : MICROCHIP
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Components Categories : Single Bipolar Transistors
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Datesheet : 2N3441 DataSheet (PDF)
The 2N3441 is a silicon PNP transistor primarily used for high-power amplification and switching applications. With a maximum collector-emitter voltage of 300V and a collector current of 10A, this transistor is well-suited for various power control and amplification tasks. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the 2N3441 transistor for a visual representation. Note: For detailed technical specifications, please refer to the 2N3441 transistor datasheet. Functionality The 2N3441 PNP transistor is designed for high-power amplification and switching tasks, providing efficient control over large currents and voltages in electronic circuits. Usage Guide Q: What is the maximum voltage rating of the 2N3441 transistor? Q: Is the 2N3441 suitable for high-current applications? For similar functionalities, consider these alternatives to the 2N3441:Overview of 2N3441
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The 2N3441 can withstand a maximum collector-emitter voltage of 300V.
A: Yes, the 2N3441 transistor is capable of handling significant collector currents up to 10A, making it ideal for high-power tasks.Equivalent
![2N3441 2N3441](/files/uploads/product/b/167bc41b-713a-41ff-3ff1-08dbc6589f1f.webp)
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | Bipolar Transistors - BJT | RoHS | N |
Mounting Style | Through Hole | Package / Case | TO-66-2 |
Transistor Polarity | NPN | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 140 V | Collector- Base Voltage VCBO | 160 V |
Emitter- Base Voltage VEBO | 7 V | Collector-Emitter Saturation Voltage | 1 V |
Maximum DC Collector Current | 3 A | Pd - Power Dissipation | 3 W |
Minimum Operating Temperature | - 65 C | Maximum Operating Temperature | + 200 C |
Brand | Microchip Technology | DC Collector/Base Gain hfe Min | 25 at 500 mA, 4 VDC |
DC Current Gain hFE Max | 100 at 500 mA, 4 VDC | Product Type | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1 | Subcategory | Transistors |
Technology | Si |
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