• 2N2369A TO-18-3
2N2369A TO-18-3

2N2369A

Trans GP BJT NPN 15V 0.2A 360mW 3-Pin TO-18

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Overview of 2N2369A

The 2N2369A is a high-speed switching transistor with a maximum collector-base voltage of 25V and a continuous collector current of 50mA. It is designed for applications requiring high switching speeds and low power dissipation, making it suitable for various electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Emitter (E): Connects to the emitter terminal
  • Base (B): Connects to the base terminal
  • Collector (C): Connects to the collector terminal

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the 2N2369A transistor for a visual representation.

Key Features

  • High-Speed Switching: The 2N2369A offers high-speed switching capabilities, ideal for fast signal processing applications.
  • Low Power Dissipation: With a low collector current and voltage ratings, this transistor minimizes power dissipation in circuits.
  • Compact Package: Available in a small TO-18 package, making it suitable for space-constrained designs.
  • Wide Operating Temperature Range: Operates within a wide temperature range, ensuring performance in various environmental conditions.
  • Reliable Performance: The 2N2369A delivers reliable performance in electronic circuits requiring high-speed switching.

Note: For detailed technical specifications, please refer to the 2N2369A datasheet.

Application

  • Switching Circuits: Ideal for use in high-speed switching circuits in electronic devices.
  • Amplification: Can be used for signal amplification in audio and low-power applications.
  • Oscillator Circuits: Suitable for oscillator circuits requiring fast switching characteristics.

Functionality

The 2N2369A transistor is designed for high-speed switching applications, providing amplification and signal processing capabilities in electronic circuits.

Usage Guide

  • Connections: Connect the emitter, base, and collector pins to their respective terminals in the circuit.
  • Voltage Ratings: Ensure the voltage across the collector-base does not exceed the maximum specified voltage rating.
  • Current Limitations: Limit the collector current to the specified maximum continuous value to prevent overheating.

Frequently Asked Questions

Q: What is the maximum collector-base voltage of the 2N2369A?
A: The 2N2369A has a maximum collector-base voltage of 25V.

Q: Can the 2N2369A be used in high-frequency applications?
A: Yes, the 2N2369A is suitable for high-speed switching applications, making it viable for high-frequency circuits.

Equivalent

For similar functionalities, consider these alternatives to the 2N2369A:

  • 2N4401: A general-purpose NPN transistor with comparable characteristics to the 2N2369A.
  • BC547: This is a popular NPN transistor suitable for amplification and switching applications.

2N2369A

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Bipolar Transistors - BJT RoHS N
Mounting Style Through Hole Package / Case TO-18-3
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 15 V Collector- Base Voltage VCBO 40 V
Emitter- Base Voltage VEBO 4.5 V Collector-Emitter Saturation Voltage 450 mV
Maximum DC Collector Current 100 mA Pd - Power Dissipation 360 mW
Minimum Operating Temperature - 65 C Maximum Operating Temperature + 200 C
Brand Microchip Technology Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 1 Subcategory Transistors
Technology Si Unit Weight 0.496363 oz

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