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SISA14DN-T1-GE3

MOSFET 30V Vds 20V Vgs PowerPAK 1212-8

Inventory:4,829

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Quick Inquiry

Please submit RFQ for SISA14DN-T1-GE3 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of SISA14DN-T1-GE3

Power Field-Effect Transistor, 20A I(D), 30V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8

Key Features

  • TrenchFET® Gen IV power MOSFET
  • 100 % Rg and UIS tested
  • Application

    SWITCHING

    Specifications

    The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

    Pbfree Code Yes Rohs Code Yes
    Part Life Cycle Code Active Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
    Package Description SMALL OUTLINE, S-PDSO-C5 Reach Compliance Code compliant
    ECCN Code EAR99 Factory Lead Time 68 Weeks
    Samacsys Manufacturer Vishay Avalanche Energy Rating (Eas) 11.25 mJ
    Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
    DS Breakdown Voltage-Min 30 V Drain Current-Max (ID) 20 A
    Drain-source On Resistance-Max 0.0051 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
    JESD-30 Code S-PDSO-C5 Number of Elements 1
    Number of Terminals 5 Operating Mode ENHANCEMENT MODE
    Package Body Material PLASTIC/EPOXY Package Shape SQUARE
    Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) 240
    Polarity/Channel Type N-CHANNEL Pulsed Drain Current-Max (IDM) 80 A
    Surface Mount YES Terminal Form C BEND
    Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 40
    Transistor Application SWITCHING Transistor Element Material SILICON

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    Warranty, Returns, and Additional Information

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      Parts Quality Guarantee: 365 days

      Returns for refund: within 90 days

      Returns for Exchange: within 90 days

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