SI7137DP-T1-GE3
P-Channel Silicon Power MOSFET with 42 Amperes Current Rating and 20 Volts Voltage Limit, featuring a 0.00195 Ohm On-Resistance
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $0.535 | $0.54 |
10 | $0.477 | $4.77 |
30 | $0.449 | $13.47 |
100 | $0.422 | $42.20 |
500 | $0.404 | $202.00 |
1000 | $0.396 | $396.00 |
Inventory:5,951
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Part Number : SI7137DP-T1-GE3
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Package/Case : PowerPAK-SO-8
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Brands : VISHAY
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : SI7137DP-T1-GE3 DataSheet (PDF)
The SI7137DP-T1-GE3 is a dual N-channel MOSFET IC designed for power management applications. It features a low on-resistance and high current capacity, making it suitable for various power switching and control circuits. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the SI7137DP-T1-GE3 IC for better understanding. Note: For detailed technical specifications, please refer to the SI7137DP-T1-GE3 datasheet. Functionality The SI7137DP-T1-GE3 features two N-channel MOSFETs that facilitate power switching and control in various electronic circuits. It provides reliable performance and high current capability for power management applications. Usage Guide Q: Is the SI7137DP-T1-GE3 suitable for high-frequency switching applications? For alternatives with similar functionalities, consider the following:Overview of SI7137DP-T1-GE3
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the SI7137DP-T1-GE3 features fast switching speeds and is suitable for high-frequency switching requirements.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | PowerPAK-SO-8 |
Transistor Polarity | P-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 20 V | Id - Continuous Drain Current | 60 A |
Rds On - Drain-Source Resistance | 1.95 mOhms | Vgs - Gate-Source Voltage | - 12 V, + 12 V |
Vgs th - Gate-Source Threshold Voltage | 1.4 V | Qg - Gate Charge | 390 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 104 W | Channel Mode | Enhancement |
Tradename | TrenchFET | Series | SI7 |
Brand | Vishay Semiconductors | Configuration | Single |
Fall Time | 110 ns | Forward Transconductance - Min | 95 S |
Product Type | MOSFET | Rise Time | 150 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 P-Channel | Typical Turn-Off Delay Time | 230 ns |
Typical Turn-On Delay Time | 100 ns | Part # Aliases | SI7137DP-GE3 |
Unit Weight | 0.017870 oz |
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