SIHG20N50C-E3
MOSFET 500V Vds 30V Vgs TO-247AC
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $1.187 | $1.19 |
10 | $1.083 | $10.83 |
25 | $0.995 | $24.88 |
100 | $0.926 | $92.60 |
500 | $0.897 | $448.50 |
1000 | $0.882 | $882.00 |
Inventory:4,407
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Part Number : SIHG20N50C-E3
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Package/Case : TO247-3
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Brands : VISHAY
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : SIHG20N50C-E3 DataSheet (PDF)
Overview of SIHG20N50C-E3
N-Channel 500 V 20A (Tc) 250W (Tc) Through Hole TO-247AC
Key Features
Application
- Power Management
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | Through Hole | Package / Case | TO-247-3 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 500 V | Id - Continuous Drain Current | 20 A |
Rds On - Drain-Source Resistance | 270 mOhms | Vgs - Gate-Source Voltage | - 30 V, + 30 V |
Vgs th - Gate-Source Threshold Voltage | 3 V | Qg - Gate Charge | 65 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 250 mW | Channel Mode | Enhancement |
Brand | Vishay / Siliconix | Configuration | Single |
Fall Time | 44 ns | Forward Transconductance - Min | 6.4 S |
Height | 20.82 mm | Length | 15.87 mm |
Product Type | MOSFET | Rise Time | 27 ns |
Factory Pack Quantity | 500 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 32 ns |
Typical Turn-On Delay Time | 80 ns | Width | 5.31 mm |
Unit Weight | 0.211644 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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