• SI2323DS-T1-E3 SOT-23-3
SI2323DS-T1-E3 SOT-23-3

SI2323DS-T1-E3

SI2323DS-T1-E3 is a P-type MOSFET with SOT-23 packaging

Quantity Unit Price(USD) Ext. Price
1 $0.352 $0.35
10 $0.307 $3.07
30 $0.287 $8.61
100 $0.262 $26.20
500 $0.247 $123.50
1000 $0.241 $241.00

Inventory:8,587

*The price is for reference only.
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Overview of SI2323DS-T1-E3

The SI2323DS-T1-E3 is a P-channel MOSFET transistor designed for use in various electronic applications. This transistor features a compact size and low on-resistance, making it suitable for power management and switching circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI2323DS-T1-E3 MOSFET for a visual representation.

Key Features

  • P-Channel MOSFET: The SI2323DS-T1-E3 is a P-channel MOSFET transistor suitable for power management applications.
  • Low On-Resistance: This transistor offers low on-resistance for efficient power handling.
  • Compact Size: With its small form factor, the SI2323DS-T1-E3 is ideal for space-constrained designs.
  • High Switching Speed: The MOSFET provides high switching speeds for responsive circuit operation.
  • Temperature Stability: Maintains stable performance across a wide temperature range.

Note: For detailed technical specifications, please refer to the SI2323DS-T1-E3 datasheet.

Application

  • Power Management: Ideal for power management circuits due to its P-channel MOSFET design.
  • Switching Circuits: Suitable for use in switching circuits where low on-resistance is required.
  • Voltage Regulation: Can be used in voltage regulation circuits for efficient power handling.

Functionality

The SI2323DS-T1-E3 P-channel MOSFET transistor is designed to control the flow of power in electronic circuits. It offers low on-resistance and high switching speeds for reliable operation.

Usage Guide

  • Gate Connection: Connect the gate pin (G) to the control signal for switching operations.
  • Drain Connection: Connect the drain pin (D) to the load or power supply.
  • Source Connection: Connect the source pin (S) to the ground or circuit common.

Frequently Asked Questions

Q: Can the SI2323DS-T1-E3 handle high-power applications?
A: The SI2323DS-T1-E3 is suitable for moderate power applications due to its low on-resistance. For high-power applications, consider higher-rated MOSFET transistors.

Q: Is the SI2323DS-T1-E3 suitable for automotive applications?
A: Yes, the SI2323DS-T1-E3 can be used in automotive applications where P-channel MOSFET transistors are required for power control.

Equivalent

For similar functionalities, consider these alternatives to the SI2323DS-T1-E3:

  • SI2365DS-T1-GE3: Another P-channel MOSFET transistor with comparable specifications and performance.
  • IPI65R190C3: This MOSFET transistor from Infineon offers similar power handling capabilities in a different package.

SI2323DS-T1-E3

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 4.7 A Rds On - Drain-Source Resistance 39 mOhms
Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 400 mV
Qg - Gate Charge 19 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.25 W
Channel Mode Enhancement Tradename TrenchFET
Series SI2 Brand Vishay Semiconductors
Configuration Single Fall Time 48 ns
Forward Transconductance - Min 16 S Height 1.45 mm
Length 2.9 mm Product Type MOSFET
Rise Time 43 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 71 ns Typical Turn-On Delay Time 25 ns
Width 1.6 mm Part # Aliases SI2323DS-T1-BE3 SI2323DS-E3
Unit Weight 0.000282 oz

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