SI2337DS-T1-E3
P-channel MOSFET
Quantity | Unit Price(USD) | Ext. Price |
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1 | $0.467 | $0.47 |
10 | $0.415 | $4.15 |
30 | $0.389 | $11.67 |
100 | $0.363 | $36.30 |
500 | $0.323 | $161.50 |
1000 | $0.315 | $315.00 |
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Part Number : SI2337DS-T1-E3
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Package/Case : SOT-23-3
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Brands : VISHAY
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : SI2337DS-T1-E3 DataSheet (PDF)
The SI2337DS-T1-E3 is an N-channel MOSFET transistor designed for use in various electronic applications. This MOSFET features a high power handling capability and low on-state resistance, making it suitable for power management and switching circuits. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the SI2337DS-T1-E3 MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the SI2337DS-T1-E3 datasheet. Functionality The SI2337DS-T1-E3 MOSFET is a high-power N-channel transistor that provides efficient power management and switching capabilities in electronic circuits. It offers low on-state resistance and fast switching speeds, making it a reliable component for diverse applications. Usage Guide Q: Is the SI2337DS-T1-E3 suitable for high-frequency applications? For similar functionalities, consider these alternatives to the SI2337DS-T1-E3:Overview of SI2337DS-T1-E3
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: While the SI2337DS-T1-E3 offers fast switching speeds, it is recommended to check the datasheet for specific frequency limitations.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 80 V |
Id - Continuous Drain Current | 2.2 A | Rds On - Drain-Source Resistance | 270 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2 V |
Qg - Gate Charge | 17 nC | Minimum Operating Temperature | - 50 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 2.5 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI2 | Brand | Vishay Semiconductors |
Configuration | Single | Fall Time | 12 ns |
Forward Transconductance - Min | 4.3 S | Height | 1.45 mm |
Length | 2.9 mm | Product Type | MOSFET |
Rise Time | 15 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 20 ns | Typical Turn-On Delay Time | 10 ns |
Width | 1.6 mm | Part # Aliases | SI2337DS-T1-BE3 SI2337DS-E3 |
Unit Weight | 0.000282 oz |
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