• SIHG47N60E-GE3 TO-247-3
SIHG47N60E-GE3 TO-247-3

SIHG47N60E-GE3

Unipolar N-MOSFET transistor with a voltage rating of 600V and a current rating of 30A

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Overview of SIHG47N60E-GE3

N-Channel 600 V 47A (Tc) 357W (Tc) Through Hole TO-247AC

Key Features

  • Low figure-of-merit (FOM) Ron x Qg
  • Low input capacitance (Ciss)
  • Reduced switching and conduction losses
  • Ultra low gate charge (Qg)
  • Avalanche energy rated (UIS)

    • Application

    • oSwitch mode power supplies (SMPS)
    • oPower factor correction power supplies (PFC)
    • oLighting
    • oHigh-intensity discharge (HID)
    • oFluorescent ballast lighting
    • oIndustrial
    • oWelding
    • oInduction heating
    • oMotor drives
    • oBattery chargers
    • oRenewable energy
    • oSolar (PV inverters)

    Specifications

    The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

    Product Category MOSFET RoHS Details
    REACH Details Technology Si
    Mounting Style Through Hole Package / Case TO-247-3
    Transistor Polarity N-Channel Number of Channels 1 Channel
    Vds - Drain-Source Breakdown Voltage 600 V Id - Continuous Drain Current 47 A
    Rds On - Drain-Source Resistance 64 mOhms Vgs - Gate-Source Voltage - 30 V, + 30 V
    Vgs th - Gate-Source Threshold Voltage 4 V Qg - Gate Charge 148 nC
    Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
    Pd - Power Dissipation 357 W Channel Mode Enhancement
    Series E Brand Vishay / Siliconix
    Configuration Single Fall Time 82 ns
    Product Type MOSFET Rise Time 72 ns
    Factory Pack Quantity 500 Subcategory MOSFETs
    Typical Turn-Off Delay Time 93 ns Typical Turn-On Delay Time 28 ns
    Unit Weight 0.211644 oz

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