SI7164DP-T1-GE3
N-Channel Power Field-Effect Transistor with 23.5A current capacity and 60V voltage capacity
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $1.577 | $1.58 |
10 | $1.360 | $13.60 |
30 | $1.241 | $37.23 |
100 | $1.107 | $110.70 |
500 | $1.047 | $523.50 |
1000 | $1.020 | $1,020.00 |
Inventory:6,627
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Part Number : SI7164DP-T1-GE3
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Package/Case : PowerPAK-SO-8
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Brands : VISHAY
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : SI7164DP-T1-GE3 DataSheet (PDF)
Overview of SI7164DP-T1-GE3
MOSFET, N CH, 60V, 60A, POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.005ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; Operating Temperature Range:-55°C to +150°C
Key Features
- 100% Rg tested
- 100% UIS tested
- Halogen-free
- -55 to 150°C Operating temperature range
Application
- Industrial
- Power Management
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | PowerPAK-SO-8 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 60 V | Id - Continuous Drain Current | 60 A |
Rds On - Drain-Source Resistance | 6.25 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 4.5 V | Qg - Gate Charge | 49.5 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 104 W | Channel Mode | Enhancement |
Tradename | TrenchFET | Series | SI7 |
Brand | Vishay Semiconductors | Configuration | Single |
Fall Time | 11 ns | Forward Transconductance - Min | 30 S |
Product Type | MOSFET | Rise Time | 11 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 40 ns |
Typical Turn-On Delay Time | 23 ns | Part # Aliases | SI7164DP-GE3 |
Unit Weight | 0.017870 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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