• packageimg
packageimg

SI9945BDY-T1-GE3

Dual N-Channel 60V MOSFET

Quantity Unit Price(USD) Ext. Price
1 $0.403 $0.40
10 $0.355 $3.55
30 $0.332 $9.96
100 $0.308 $30.80
500 $0.293 $146.50
1000 $0.285 $285.00

Inventory:4,545

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Quick Inquiry

Please submit RFQ for SI9945BDY-T1-GE3 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of SI9945BDY-T1-GE3

The SI9945BDY-T1-GE3 is a dual N-channel MOSFET IC designed for high-speed switching applications in power electronics and motor control systems. It features ultra-low on-resistance and high current-handling capabilities, making it suitable for efficient power management solutions.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Gate 1
  • Drain 1
  • Source 1
  • Gate 2
  • Drain 2
  • Source 2
  • Body Diode 1
  • Body Diode 2

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI9945BDY-T1-GE3 IC for a visual representation.

Key Features

  • Dual N-Channel MOSFET: Features two N-channel MOSFETs for high-performance switching applications.
  • Low On-Resistance: The SI9945BDY-T1-GE3 offers ultra-low on-resistance for minimal power loss and efficient operation.
  • High Current Handling: Capable of handling high currents, making it ideal for power management and motor control systems.
  • Fast Switching Speed: Provides fast switching speeds for high-frequency applications requiring rapid on/off transitions.
  • Enhanced Thermal Performance: Designed for improved thermal dissipation to handle high-power operation effectively.

Note: For detailed technical specifications, please refer to the SI9945BDY-T1-GE3 datasheet.

Application

  • Power Electronics: Ideal for use in power electronics systems for efficient switching and power management.
  • Motor Control: Suitable for motor control applications requiring high-speed switching and robust performance.
  • DC-DC Converters: Used in DC-DC converter circuits for voltage regulation and power conversion.

Functionality

The SI9945BDY-T1-GE3 is a dual N-channel MOSFET IC designed for high-speed switching applications, providing reliable and efficient performance in power management and motor control systems.

Usage Guide

  • Gate Connections: Connect the gate pins to the driving circuit to control the switching of the MOSFETs.
  • Drain Connections: Connect the drain pins to the load or power supply in the circuit.
  • Source Connections: Connect the source pins to the ground or common reference point.

Frequently Asked Questions

Q: Is the SI9945BDY-T1-GE3 suitable for high-frequency applications?
A: Yes, the SI9945BDY-T1-GE3 offers fast switching speeds and is suitable for high-frequency switching applications.

Equivalent

For alternatives with similar functionalities, consider these products:

  • SI9945CY: A comparable dual N-channel MOSFET IC from a different manufacturer, offering similar performance characteristics.
  • SI9955BDY-T1-GE3: This dual N-channel MOSFET IC provides enhanced features for specific applications, offering an alternative to the SI9945BDY-T1-GE3.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOIC-8 Transistor Polarity N-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 5.3 A Rds On - Drain-Source Resistance 58 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 13 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 3.1 W
Channel Mode Enhancement Tradename TrenchFET
Series SI9 Brand Vishay Semiconductors
Configuration Dual Fall Time 10 ns
Forward Transconductance - Min 15 S Product Type MOSFET
Rise Time 15 ns, 65 ns Factory Pack Quantity 2500
Subcategory MOSFETs Transistor Type 2 N-Channel
Typical Turn-Off Delay Time 10 ns, 15 ns Typical Turn-On Delay Time 15 ns, 20 ns
Part # Aliases SI9945BDY-GE3 Unit Weight 0.026455 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, SF, UPS, or DHL.UPS, or DHL.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA, MasterCard, UnionPay, Western Union, PayPal, and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

Similar Product

SIHG20N50C-E3

SIHG20N50C-E3

MOSFET 500V Vds 30V Vgs TO-247AC
SI2337DS-T1-E3

SI2337DS-T1-E3

P-channel MOSFET
SI7489DP-T1-GE3

SI7489DP-T1-GE3

VISHAY - SI7489DP-T1-GE3 - MOSFET, P CH, 100V, 28A, POWERPAK
SI2323DS-T1-E3

SI2323DS-T1-E3

SI2323DS-T1-E3 is a P-type MOSFET with SOT-23 packaging
SI7850DP-T1-E3

SI7850DP-T1-E3

60V, 6.2A Power MOSFET
SI7137DP-T1-GE3

SI7137DP-T1-GE3

P-Channel Silicon Power MOSFET with 42 Amperes Current Rating and 20 Volts Voltage Limit, featuring a 0.00195 Ohm On-Resistance
SIS412DN-T1-GE3

SIS412DN-T1-GE3

VISHAY - SIS412DN-T1-GE3 - MOSFET, N-CH, 30V, 12A, POWERPAK8
SI2333CDS-T1-GE3

SI2333CDS-T1-GE3

Product Code: SI2333CDS-T1-GE3 - A surface mount power MOSFET with a P-channel configuration