SI4435DDY-T1-GE3
SI4435DDY-T1-GE3, P-channel MOSFET Transistor 8.1A 30V, 8-Pin SOIC
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
5 | $0.170 | $0.85 |
50 | $0.149 | $7.45 |
150 | $0.140 | $21.00 |
500 | $0.130 | $65.00 |
2500 | $0.111 | $277.50 |
5000 | $0.108 | $540.00 |
Inventory:6,245
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Part Number : SI4435DDY-T1-GE3
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Package/Case : SOIC-8
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Brands : VISHAY
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : SI4435DDY-T1-GE3 DataSheet (PDF)
The SI4435DDY-T1-GE3 is a P-Channel MOSFET transistor designed for use in power management applications. This MOSFET features a low on-resistance and high load capacity, making it suitable for various power control and switching circuits. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the SI4435DDY-T1-GE3 for a visual representation. Note: For detailed technical specifications, please refer to the SI4435DDY-T1-GE3 datasheet. Functionality The SI4435DDY-T1-GE3 is a P-Channel MOSFET transistor used for power control and management in various electronic circuits. It offers a reliable and efficient solution for controlling power flow in different applications. Usage Guide Q: Is the SI4435DDY-T1-GE3 suitable for high-frequency switching applications? For similar functionalities, consider these alternatives to the SI4435DDY-T1-GE3:Overview of SI4435DDY-T1-GE3
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the SI4435DDY-T1-GE3 offers fast switching speed and is suitable for high-frequency switching applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | SOIC-8 |
Transistor Polarity | P-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 30 V | Id - Continuous Drain Current | 11.4 A |
Rds On - Drain-Source Resistance | 24 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 1 V | Qg - Gate Charge | 50 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 5 W | Channel Mode | Enhancement |
Tradename | TrenchFET | Series | SI4 |
Brand | Vishay Semiconductors | Configuration | Single |
Fall Time | 12 ns | Forward Transconductance - Min | 23 S |
Product Type | MOSFET | Rise Time | 8 ns |
Factory Pack Quantity | 2500 | Subcategory | MOSFETs |
Transistor Type | 1 P-Channel | Typical Turn-Off Delay Time | 45 ns |
Typical Turn-On Delay Time | 10 ns | Part # Aliases | SI4435DDY-GE3 |
Unit Weight | 0.026455 oz |
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