• SI4435DDY-T1-GE3 SOIC-8
SI4435DDY-T1-GE3 SOIC-8

SI4435DDY-T1-GE3

SI4435DDY-T1-GE3, P-channel MOSFET Transistor 8.1A 30V, 8-Pin SOIC

Quantity Unit Price(USD) Ext. Price
5 $0.170 $0.85
50 $0.149 $7.45
150 $0.140 $21.00
500 $0.130 $65.00
2500 $0.111 $277.50
5000 $0.108 $540.00

Inventory:6,245

*The price is for reference only.
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Overview of SI4435DDY-T1-GE3

The SI4435DDY-T1-GE3 is a P-Channel MOSFET transistor designed for use in power management applications. This MOSFET features a low on-resistance and high load capacity, making it suitable for various power control and switching circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI4435DDY-T1-GE3 for a visual representation.

Key Features

  • P-Channel MOSFET: The SI4435DDY-T1-GE3 is a P-Channel MOSFET suitable for low-side switching applications.
  • Low On-Resistance: This MOSFET offers a low on-resistance for efficient power management.
  • High Load Capacity: With its high load capacity, the SI4435DDY-T1-GE3 can handle significant power levels.
  • Fast Switching Speed: The MOSFET provides fast switching speeds for rapid control of power flow.
  • Temperature Stability: Designed for temperature stability to ensure reliable performance in various operating conditions.

Note: For detailed technical specifications, please refer to the SI4435DDY-T1-GE3 datasheet.

Application

  • Power Management: Ideal for power management applications such as voltage regulation and current control.
  • Switching Circuits: Suitable for use in switching circuits for turning power on and off based on control signals.
  • Inverter Control: Can be used in inverter control circuits for converting DC power to AC power.

Functionality

The SI4435DDY-T1-GE3 is a P-Channel MOSFET transistor used for power control and management in various electronic circuits. It offers a reliable and efficient solution for controlling power flow in different applications.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the gate terminal for controlling the MOSFET switching.
  • Load Connection: Connect the load between the drain and source terminals to control the power flow.
  • Heat Dissipation: Ensure proper heat dissipation mechanisms for temperature management during operation.

Frequently Asked Questions

Q: Is the SI4435DDY-T1-GE3 suitable for high-frequency switching applications?
A: Yes, the SI4435DDY-T1-GE3 offers fast switching speed and is suitable for high-frequency switching applications.

Equivalent

For similar functionalities, consider these alternatives to the SI4435DDY-T1-GE3:

  • SI4415DY-T1-GE3: A similar P-Channel MOSFET with slightly different specifications but compatible for many applications.
  • SI4455DDY-T1-GE3: Another P-Channel MOSFET option offering comparable performance to the SI4435DDY-T1-GE3.

SI4435DDY-T1-GE3

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case SOIC-8
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V Id - Continuous Drain Current 11.4 A
Rds On - Drain-Source Resistance 24 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1 V Qg - Gate Charge 50 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 5 W Channel Mode Enhancement
Tradename TrenchFET Series SI4
Brand Vishay Semiconductors Configuration Single
Fall Time 12 ns Forward Transconductance - Min 23 S
Product Type MOSFET Rise Time 8 ns
Factory Pack Quantity 2500 Subcategory MOSFETs
Transistor Type 1 P-Channel Typical Turn-Off Delay Time 45 ns
Typical Turn-On Delay Time 10 ns Part # Aliases SI4435DDY-GE3
Unit Weight 0.026455 oz

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