• SI2365EDS-T1-GE3 SOT-23-3
SI2365EDS-T1-GE3 SOT-23-3

SI2365EDS-T1-GE3

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Overview of SI2365EDS-T1-GE3

The SI2365EDS-T1-GE3 is a P-channel MOSFET transistor with a compact and efficient design, suitable for a wide range of electronic applications.This transistor is engineered to provide high performance in power management circuits and switching applications.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • Gate:Control terminal for the MOSFET
  • Drain:Power terminal where the current flows in and out
  • Source:Common terminal for current flow
  • Sense:Voltage sense pin for monitoring
  • Ground:Reference potential
  • NC:No Connection


Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI2365EDS-T1-GE3 MOSFET for a visual representation.

Key Features

  • P-Channel MOSFET:The SI2365EDS-T1-GE3 features a P-channel enhancement mode MOSFET for efficient power management.
  • High Efficiency:This transistor offers high efficiency and low power loss in switching applications.
  • Compact Design:With its small form factor,this MOSFET is suitable for space-constrained applications.
  • Low On-Resistance:The SI2365EDS-T1-GE3 has low on-resistance to minimize power dissipation.
  • Overcurrent Protection:Includes overcurrent protection features for increased reliability in power circuits.

Note:For detailed technical specifications,please refer to the SI2365EDS-T1-GE3 datasheet.

Application

  • Power Management:Ideal for use in power management circuits,motor control,and battery protection systems.
  • Switching Circuits:Suitable for switching applications such as load switching,power sequencing,and DC-DC converters.
  • Voltage Regulation:Used in voltage regulation circuits requiring efficient power handling.

Functionality

The SI2365EDS-T1-GE3 is a high-performance P-channel MOSFET transistor designed for power management and switching applications.It offers reliable and efficient operation in various electronic circuits.

Usage Guide

  • Gate Connection:Connect the gate terminal to the controlling signal for MOSFET switching.
  • Power Connections:Connect the drain and source terminals to the power supply for current flow.
  • Monitoring:Utilize the sense pin for voltage monitoring and overcurrent protection.

Frequently Asked Questions

Q:Can the SI2365EDS-T1-GE3 handle high currents?
A:Yes,the SI2365EDS-T1-GE3 is designed to handle high currents with its low on-resistance and overcurrent protection.

Equivalent

For similar functionalities,consider these alternatives to the SI2365EDS-T1-GE3:

  • SI2365DS-T1-GE3:Another variant of the SI2365 MOSFET with similar performance characteristics.
  • SI2365EDST1EU:This is a variant of the SI2365 MOSFET designed for European market specifications.

SI2365EDS-T1-GE3

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 5.9 A Rds On - Drain-Source Resistance 26.5 mOhms
Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 13.8 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.7 W
Channel Mode Enhancement Tradename TrenchFET
Series SI2 Brand Vishay Semiconductors
Configuration Single Fall Time 14 ns
Height 1.45 mm Length 2.9 mm
Product Type MOSFET Rise Time 21 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 P-Channel Typical Turn-Off Delay Time 62 ns
Typical Turn-On Delay Time 22 ns Width 1.6 mm
Part # Aliases SI2365EDS-T1-BE3 SI4816DY-T1-E3-S Unit Weight 0.000282 oz

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