• SI2343CDS-T1-GE3 SOT-23-3
SI2343CDS-T1-GE3 SOT-23-3

SI2343CDS-T1-GE3

SI2343CDS-T1-GE3 features a P-channel design and a 30-volt rating

Quantity Unit Price(USD) Ext. Price
1 $0.347 $0.35
10 $0.306 $3.06
30 $0.289 $8.67
100 $0.266 $26.60
500 $0.221 $110.50
1000 $0.214 $214.00

Inventory:8,403

*The price is for reference only.
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Overview of SI2343CDS-T1-GE3

The SI2343CDS-T1-GE3 is a P-channel MOSFET transistor designed for use in power management and switching applications. This transistor features a low on-resistance and high load capacity, making it ideal for various electronic circuits requiring efficient power control.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI2343CDS-T1-GE3 MOSFET for a visual representation.

Key Features

  • P-Channel MOSFET: The SI2343CDS-T1-GE3 is a P-channel MOSFET suitable for low-side switching applications.
  • Low On-Resistance: This transistor offers a low on-resistance, minimizing power losses during operation.
  • High Load Capacity: With its high load capacity, the SI2343CDS-T1-GE3 can handle significant current levels reliably.
  • Fast Switching Speed: This MOSFET provides fast switching characteristics, ensuring quick response times in power control applications.
  • Compact Size: Available in a compact package, the SI2343CDS-T1-GE3 is space-efficient for board designs.

Note: For detailed technical specifications, please refer to the SI2343CDS-T1-GE3 datasheet.

Application

  • Power Management: Ideal for power management circuits in various electronic devices.
  • Switching Circuits: Suitable for low-side switching applications in electronic systems.
  • Battery Protection: Used in battery protection circuits to control power flow efficiently.

Functionality

The SI2343CDS-T1-GE3 P-channel MOSFET transistor is designed for efficient power control with its low on-resistance and high load capacity. It ensures reliable performance in power management and switching applications.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the gate pin to control the power flow between the drain and source.
  • Load Connection: Connect the load to the drain pin for efficient power switching operations.
  • Source Connection: Ground the source pin for proper transistor operation.

Frequently Asked Questions

Q: Is the SI2343CDS-T1-GE3 suitable for high-frequency switching applications?
A: The SI2343CDS-T1-GE3 is designed for low- to moderate-frequency switching applications. For high-frequency requirements, consider alternatives with faster switching speeds.

Equivalent

For similar functionalities, consider these alternatives to the SI2343CDS-T1-GE3:

  • SIMILAR_PRODUCT_1: Description of similar product 1.
  • SIMILAR_PRODUCT_2: Description of similar product 2.

SI2343CDS-T1-GE3

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 5.9 A Rds On - Drain-Source Resistance 45 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 7 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 2.5 W
Channel Mode Enhancement Tradename TrenchFET
Series SI2 Brand Vishay Semiconductors
Configuration Single Fall Time 8 ns
Product Type MOSFET Rise Time 10 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 P-Channel Typical Turn-Off Delay Time 18 ns
Typical Turn-On Delay Time 8 ns Part # Aliases SI2343CDS-T1-BE3 SI2343CDS-GE3
Unit Weight 0.000282 oz

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