• SI2303CDS-T1-GE3 SOT-23-3 (TO-236)
SI2303CDS-T1-GE3 SOT-23-3 (TO-236)

SI2303CDS-T1-GE3

SI2303CDS-T1-GE3, P-channel MOSFET Transistor 1.9 A 30 V, 3-Pin SOT-23

Quantity Unit Price(USD) Ext. Price
5 $0.076 $0.38
50 $0.066 $3.30
150 $0.061 $9.15
500 $0.059 $29.50
3000 $0.053 $159.00
6000 $0.051 $306.00

Inventory:5,730

*The price is for reference only.
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Overview of SI2303CDS-T1-GE3

The SI2303CDS-T1-GE3 is a P-Channel MOSFET transistor designed for use in various electronic applications. It features a compact package and low on-state resistance, making it suitable for power management and switching circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI2303CDS-T1-GE3 for a visual representation.

Key Features

  • P-Channel MOSFET: The SI2303CDS-T1-GE3 is a P-Channel MOSFET suitable for low-power applications.
  • Low On-State Resistance: With a low RDS(on), this transistor minimizes power loss in circuit operation.
  • Compact Package: The transistor comes in a compact package, saving board space in electronic designs.
  • High Switching Speed: The SI2303CDS-T1-GE3 offers fast switching speeds, ideal for applications requiring quick response times.

Note: For detailed technical specifications, please refer to the SI2303CDS-T1-GE3 datasheet.

Application

  • Power Management: Ideal for power switching and management in DC circuits.
  • Solid-State Switching: Suitable for use in solid-state relays and switching applications.
  • Battery Protection: Can be utilized for battery protection and power distribution in portable devices.

Functionality

The SI2303CDS-T1-GE3 is a P-Channel MOSFET transistor that enables efficient power management and switching in electronic circuits. It is a reliable component for various low-power applications.

Usage Guide

  • Gate Connection: Connect the gate (G) pin to the control signal to switch the MOSFET on and off.
  • Drain and Source: Connect the drain (D) and source (S) pins in the circuit according to the specific application requirements.
  • Current Limiting: Implement proper current limiting and protection mechanisms to ensure the safe operation of the transistor.

Frequently Asked Questions

Q: Can the SI2303CDS-T1-GE3 be used in high-temperature environments?
A: Yes, the SI2303CDS-T1-GE3 is designed to operate within specified temperature ranges for reliable performance.

Equivalent

For similar functionalities, consider these alternatives to the SI2303CDS-T1-GE3:

  • SI2302CDS-T1-GE3: Another P-Channel MOSFET from the same series, offering similar characteristics and performance.
  • SI2304CDS-T1-GE3: A higher power P-Channel MOSFET variant suitable for applications requiring higher current handling capabilities.

SI2303CDS-T1-GE3

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer VISHAY Product Category FETs - Single
Series TrenchFET® Packaging Alternate Packaging
Part-Aliases SMD/SMT Unit-Weight -55°C ~ 150°C (TJ)
Mounting-Style SOT-23-3 (TO-236) Package-Case Single
Technology MOSFET P-Channel, Metal Oxide Operating-Temperature 30V
Mounting-Type 2.7A (Tc) Number-of-Channels 190 mOhm @ 1.9A, 10V
Supplier-Device-Package 3V @ 250μA Configuration 8nC @ 10V
FET-Type 1 W Power-Max 37 ns
Transistor-Type 1.9 A VDSS – Drain-Source Voltage - 30 V
Input Capacitance 12 ns

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