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SI2303BDS-T1-E3

SI2303BDS-T1-E3, P-channel MOSFET Transistor 1.3 A 30 V, 3-Pin SOT-23, TO-236

Inventory:6,116

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Overview of SI2303BDS-T1-E3

Offering a single element design, the SI2303BDS-T1-E3 is a versatile component that can be easily integrated into circuitry requiring P-channel MOSFET capabilities. Its metal-oxide semiconductor construction ensures high conductivity and low resistance, making it an ideal choice for power switching and signal amplification tasks

Key Features

  • Halogen-free Option Available

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code Yes Rohs Code Yes
Part Life Cycle Code Obsolete Ihs Manufacturer VISHAY SILICONIX
Part Package Code SOT-23 Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3 Reach Compliance Code
ECCN Code EAR99 Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 30 V
Drain Current-Max (Abs) (ID) 1.49 A Drain Current-Max (ID) 1.49 A
Drain-source On Resistance-Max 0.2 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236 JESD-30 Code R-PDSO-G3
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL Power Dissipation-Max (Abs) 0.9 W
Qualification Status Not Qualified Surface Mount YES
Terminal Finish Matte Tin (Sn) Terminal Form GULL WING
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

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