SI2301BDS-T1-E3
MOSFET RECOMMENDED ALT 781-SI2301CDS-T1-GE3
Inventory:6,597
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Part Number : SI2301BDS-T1-E3
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Package/Case : SOT23-3
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Brands : VISHAY
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Components Categories : Single FETs, MOSFETs
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Datesheet : SI2301BDS-T1-E3 DataSheet (PDF)
Overview of SI2301BDS-T1-E3
P-Channel 20 V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)
Key Features
- Halogen-free Option Available
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 2.4 A | Rds On - Drain-Source Resistance | 100 mOhms |
Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 450 mV |
Qg - Gate Charge | 10 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 900 mW |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI2 | Brand | Vishay Semiconductors |
Configuration | Single | Fall Time | 20 ns |
Forward Transconductance - Min | 6.5 S | Height | 1.45 mm |
Length | 2.9 mm | Product Type | MOSFET |
Rise Time | 40 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 30 ns | Typical Turn-On Delay Time | 20 ns |
Width | 1.6 mm | Part # Aliases | SI2301BDS-T1-BE3 SI2301BDS-E3 |
Unit Weight | 0.000282 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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