SI1902DL-T1-E3
MOSFET 20V 0.70A Dual N-Channel 20 V (D-S) MOSFET
Inventory:5,889
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Part Number : SI1902DL-T1-E3
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Package/Case : SC-70-6
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Brands : VISHAY
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Components Categories : FET, MOSFET Arrays
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Datesheet : SI1902DL-T1-E3 DataSheet (PDF)
Overview of SI1902DL-T1-E3
In conclusion, the SI1902DL-T1-E3 N-Channel MOSFET transistor combines efficiency and performance in a compact and reliable package. With its impressive specifications and design features, this transistor is a valuable component for applications that prioritize power management and efficiency. Its small size and high performance make it a versatile choice for various electronic circuits and systems where space is at a premium. Trust Vishay Siliconix's SI1902DL-T1-E3 MOSFET transistor for your power management needs
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsFET, MOSFET Arrays | Mfr | Vishay Siliconix |
| Series | TrenchFET® | Package | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® |
| Product Status | Active | Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) | FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V | Current - Continuous Drain (Id) @ 25°C | 660mA |
| Rds On (Max) @ Id, Vgs | 385mOhm @ 660mA, 4.5V | Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 1.2nC @ 4.5V | Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 270mW | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SC-70-6 | Base Product Number | SI1902 |
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Warranty, Returns, and Additional Information
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Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
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