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G2R50MT33K

MOSFET 3300V 50mOhmTO-247-4 SiC MOSFET

Inventory:6,143

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Overview of G2R50MT33K

MOSFET, N-CH, 3.3KV, 63A, TO-247; MOSFET Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:63A; Drain Source Voltage Vds:3.3kV; No. of Pins:4Pins; Rds(on) Test Voltage:20V; Power Dissipation:536W RoHS Compliant: Yes

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer GeneSiC Semiconductor Product Category MOSFET
RoHS Details Technology SiC
Mounting Style Through Hole Package / Case TO-247-4
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 3.3 kV Id - Continuous Drain Current 63 A
Vgs - Gate-Source Voltage - 5 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3.5 V
Qg - Gate Charge 340 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 536 W
Channel Mode Enhancement Series G2R
Brand GeneSiC Semiconductor Configuration Single
Fall Time 18 ns Product MOSFET
Product Type MOSFET Rise Time 37 ns
Factory Pack Quantity 30 Subcategory MOSFETs
Transistor Type MOSFET Type SiC MOSFET
Typical Turn-Off Delay Time 32 ns Typical Turn-On Delay Time 74 ns
Unit Weight 0.218699 oz

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