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G3R12MT12K

Silicon Carbide MOSFET N-Channel Enhancement Mode

Inventory:5,029

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Overview of G3R12MT12K

N-Channel 1200 V 157A (Tc) 567W (Tc) Through Hole TO-247-4

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Package Tube Product Status Active
FET Type N-Channel Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V Current - Continuous Drain (Id) @ 25°C 157A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V Rds On (Max) @ Id, Vgs 13mOhm @ 100A, 18V
Vgs(th) (Max) @ Id 2.7V @ 50mA Gate Charge (Qg) (Max) @ Vgs 288 nC @ 15 V
Vgs (Max) +22V, -10V Input Capacitance (Ciss) (Max) @ Vds 9335 pF @ 800 V
Power Dissipation (Max) 567W (Tc) Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole Supplier Device Package TO-247-4
Package / Case TO-247-4 Base Product Number G3R12M

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