G3R160MT17D

Name: G3R160MT17D
Brand: Genesic Semiconductor
Rating: 4.5 (10 reviews)

Silicon Carbide MOSFET N Channel Enhancement Mode

Inventory:6,462

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N-Channel 1700 V 21A (Tc) 175W (Tc) Through Hole TO-247-3

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category	MOSFET	RoHS	Details
Technology	SiC	Mounting Style	Through Hole
Package / Case	TO-247-3	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	1.7 kV
Id - Continuous Drain Current	17 A	Rds On - Drain-Source Resistance	160 mOhms
Vgs - Gate-Source Voltage	- 5 V, + 15 V	Vgs th - Gate-Source Threshold Voltage	2.7 V
Qg - Gate Charge	29 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	138 W
Channel Mode	Enhancement	Series	G3R
Brand	GeneSiC Semiconductor	Configuration	Single
Fall Time	21 ns	Forward Transconductance - Min	4.7 S
Product	MOSFETs	Product Type	MOSFET
Rise Time	28 ns	Factory Pack Quantity	30
Subcategory	MOSFETs	Transistor Type	MOSFET
Type	SiC MOSFET	Typical Turn-Off Delay Time	34 ns
Typical Turn-On Delay Time	32 ns	Unit Weight	0.211644 oz

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