G2R120MT33J

Name: G2R120MT33J
Brand: GeneSiC Semiconductor
Rating: 4.5 (10 reviews)

Silicon Carbide MOSFET N-Channel Enhancement Mode

Inventory:9,970

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N-Channel 3300 V 35A Surface Mount TO-263-7

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series	G2R™	Package	Tube
Product Status	Active	FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)	Drain to Source Voltage (Vdss)	3300 V
Current - Continuous Drain (Id) @ 25°C	35A	Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	156mOhm @ 20A, 20V	Gate Charge (Qg) (Max) @ Vgs	145 nC @ 20 V
Vgs (Max)	+25V, -10V	Input Capacitance (Ciss) (Max) @ Vds	3706 pF @ 1000 V
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount
Supplier Device Package	TO-263-7	Package / Case	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Base Product Number	G2R120

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