G3R350MT12J

Name: G3R350MT12J
Brand: GeneSiC Semiconductor
Rating: 4.5 (10 reviews)

Silicon Carbide MOSFET N Channel Enhancement Mode

Inventory:9,018

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N-Channel 1200 V 11A (Tc) 75W (Tc) Surface Mount TO-263-7

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series	G3R™	Package	Tube
Product Status	Active	FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)	Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	11A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	420mOhm @ 4A, 15V	Vgs(th) (Max) @ Id	2.69V @ 2mA
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 15 V	Vgs (Max)	±15V
Input Capacitance (Ciss) (Max) @ Vds	334 pF @ 800 V	Power Dissipation (Max)	75W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount
Supplier Device Package	TO-263-7	Package / Case	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Base Product Number	G3R350

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