BSC010NE2LS
MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
| Quantity | Unit Price(USD) | Ext. Price |
|---|---|---|
| 1 | $1.673 | $1.67 |
| 10 | $1.464 | $14.64 |
| 30 | $1.335 | $40.05 |
| 100 | $1.200 | $120.00 |
| 500 | $1.140 | $570.00 |
| 1000 | $1.114 | $1,114.00 |
Inventory:3,783
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Part Number : BSC010NE2LS
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Package/Case : TDSON-8
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Brands : INFINEON
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Components Categories : Power Field-Effect Transistors
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Datesheet : BSC010NE2LS DataSheet (PDF)
Overview of BSC010NE2LS
N-Channel 25 V 39A (Ta), 100A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount PG-TDSON-8-7
Key Features
- Optimized for Synchronous Rectification
- 35% lower RDS(on) than alternative devices
- 45% improvement of FOM over similar devices
- Integrated Schottky-like diode
- RoHS compliant - halogen free
- MSL1 rated
- Benefits
- Highest system efficiency
- Less paralleling required
- Increased power density
- System cost reduction
- Very low voltage overshoot
Application
SWITCHINGSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Source Content uid | BSC010NE2LS | Pbfree Code | Yes |
| Rohs Code | Yes | Part Life Cycle Code | Active |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | Package Description | SMALL OUTLINE, R-PDSO-F5 |
| Pin Count | 8 | Reach Compliance Code | not_compliant |
| ECCN Code | EAR99 | Samacsys Manufacturer | Infineon |
| Avalanche Energy Rating (Eas) | 190 mJ | Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 25 V |
| Drain Current-Max (Abs) (ID) | 100 A | Drain Current-Max (ID) | 40 A |
| Drain-source On Resistance-Max | 0.0013 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-F5 | JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 | Number of Elements | 1 |
| Number of Terminals | 5 | Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C | Operating Temperature-Min | -55 °C |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE | Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 96 W | Pulsed Drain Current-Max (IDM) | 400 A |
| Qualification Status | Not Qualified | Surface Mount | YES |
| Terminal Finish | TIN | Terminal Form | FLAT |
| Terminal Position | DUAL | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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