• SPD02N80C3 TO-252-3
SPD02N80C3 TO-252-3

SPD02N80C3

Infineon SPD02N80C3 N-channel MOSFET Transistor, 2 A, 800 V, 3-Pin TO-252

Quantity Unit Price(USD) Ext. Price
1 $3.669 $3.67
10 $3.254 $32.54
30 $3.008 $90.24
100 $2.758 $275.80
500 $2.643 $1,321.50
1000 $2.591 $2,591.00

Inventory:5,111

*The price is for reference only.
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Overview of SPD02N80C3

Power Field-Effect Transistor, 2A I(D), 800V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 2/3 PIN

SPD02N80C3

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid SPD02N80C3 Pbfree Code Yes
Rohs Code Yes Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG Part Package Code TO-252AA
Package Description GREEN, PLASTIC, TO-252, 2/3 PIN Pin Count 4
Reach Compliance Code not_compliant ECCN Code EAR99
Samacsys Manufacturer Infineon Additional Feature AVALANCHE RATED, HIGH VOLTAGE
Avalanche Energy Rating (Eas) 90 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 800 V
Drain Current-Max (Abs) (ID) 2 A Drain Current-Max (ID) 2 A
Drain-source On Resistance-Max 2.7 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA JESD-30 Code R-PSSO-G2
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 2
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 42 W
Pulsed Drain Current-Max (IDM) 6 A Qualification Status Not Qualified
Surface Mount YES Terminal Finish TIN
Terminal Form GULL WING Terminal Position SINGLE
Transistor Application SWITCHING Transistor Element Material SILICON

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