• IPP65R190CFD TO-220-3
  • IPP65R190CFD
IPP65R190CFD TO-220-3
IPP65R190CFD

IPP65R190CFD

Infineon IPP65R190CFD N-channel MOSFET Transistor, 17.5 A, 700 V, 3+Tab-Pin TO-220

Quantity Unit Price(USD) Ext. Price
1 $211.954 $211.95
30 $208.391 $6,251.73

Inventory:3,868

*The price is for reference only.
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Overview of IPP65R190CFD

Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

IPP65R190CFD

Key Features

  • - Rds-on-drain-source resistance of 190 mOhms
  • - Mounting style of through hole
  • - Rise time of 8.4 ns
  • - Part of the CoolMOS family
  • - Drain-source voltage of 650 V
  • - Gate-source voltage of 30 V
  • - Continuous drain current of 65 A
  • - Unit weight of 0.211644 oz
  • - TO-220-3 package
IPP65R190CFD

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid IPP65R190CFD Pbfree Code Yes
Rohs Code Yes Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3 Pin Count 3
Reach Compliance Code compliant ECCN Code EAR99
Samacsys Manufacturer Infineon Avalanche Energy Rating (Eas) 484 mJ
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 650 V
Drain Current-Max (Abs) (ID) 17.5 A Drain Current-Max (ID) 17.5 A
Drain-source On Resistance-Max 0.19 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB JESD-30 Code R-PSFM-T3
JESD-609 Code e3 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 151 W Pulsed Drain Current-Max (IDM) 57.2 A
Qualification Status Not Qualified Surface Mount NO
Terminal Finish TIN Terminal Form THROUGH-HOLE
Terminal Position SINGLE Transistor Application SWITCHING
Transistor Element Material SILICON

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