• IPB027N10N5 TO-263-3
IPB027N10N5 TO-263-3

IPB027N10N5

MOSFET TRENCH >=100V

Quantity Unit Price(USD) Ext. Price
1 $4.315 $4.32
10 $3.767 $37.67
30 $3.443 $103.29
100 $3.114 $311.40
500 $2.963 $1,481.50
1000 $2.895 $2,895.00

Inventory:4,912

*The price is for reference only.
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Quick Inquiry

Please submit RFQ for IPB027N10N5 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of IPB027N10N5

OptiMOS™ 5 100V power MOSFET IPB027N10N5 from Infineon is especially designed for synchronous rectification in telecom blocks including Or-ing, hotswap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.

IPB027N10N5

Key Features

  • Ideal for high frequency switching and sync. rec.
  • Excellent gate charge x RDS(on) product (FOM)
  • Very low on-resistance  RDS(on)
  • N-channel, normal level
  • 100% avalanche tested
  • ​​​​​​​ Pb-free plating; RoHS compliant
  • Qualified according to JEDEC1)  for target applications
  • Halogen-free according to IEC61249-2-21

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid IPB027N10N5 Rohs Code Yes
Part Life Cycle Code Active Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2 Reach Compliance Code compliant
ECCN Code EAR99 Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 461 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 120 A Drain-source On Resistance-Max 0.0027 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 2 Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 480 A Surface Mount YES
Terminal Finish TIN Terminal Form GULL WING
Terminal Position SINGLE Transistor Application SWITCHING
Transistor Element Material SILICON

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