• IRF420 TO-3
IRF420 TO-3

IRF420

Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

Inventory:4,904

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Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code No Part Life Cycle Code Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR Package Description FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code ECCN Code EAR99
HTS Code 8541.29.00.95 Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 500 V
Drain Current-Max (Abs) (ID) 2.5 A Drain Current-Max (ID) 2.5 A
Drain-source On Resistance-Max 3 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204AA JESD-30 Code O-MBFM-P2
JESD-609 Code e0 Number of Elements 1
Number of Terminals 2 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Package Body Material METAL
Package Shape ROUND Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL Power Dissipation Ambient-Max 50 W
Power Dissipation-Max (Abs) 50 W Pulsed Drain Current-Max (IDM) 10 A
Qualification Status Not Qualified Surface Mount NO
Terminal Finish TIN LEAD Terminal Form PIN/PEG
Terminal Position BOTTOM Transistor Application SWITCHING
Transistor Element Material SILICON Turn-off Time-Max (toff) 60 ns
Turn-on Time-Max (ton) 33 ns

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