• packageimg
packageimg

IRL2703

Trans MOSFET N-CH Si 30V 24A 3-Pin(3+Tab) TO-220AB Tube

Inventory:5,436

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Quick Inquiry

Please submit RFQ for IRL2703 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of IRL2703

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code No Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP Part Package Code TO-220AB
Package Description TO-220AB, 3 PIN Pin Count 3
Reach Compliance Code ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE Avalanche Energy Rating (Eas) 77 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V Drain Current-Max (Abs) (ID) 24 A
Drain Current-Max (ID) 24 A Drain-source On Resistance-Max 0.04 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 JESD-609 Code e0
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 45 W Pulsed Drain Current-Max (IDM) 96 A
Qualification Status Not Qualified Surface Mount NO
Terminal Finish TIN LEAD Terminal Form THROUGH-HOLE
Terminal Position SINGLE Transistor Application SWITCHING
Transistor Element Material SILICON Tj max 175.0 °C
VDS max 30.0 V VGS max 16.0 V
Package TO-220 Polarity N
Ptot max 45.0 W Mounting THT
RthJC max 3.3 K/W RDS (on) max 60.0 mΩ
VGS(th) min 1.0 V ID max 24.0 A

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, SF, UPS, or DHL.UPS, or DHL.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA, MasterCard, UnionPay, Western Union, PayPal, and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

Similar Product

IRFR2405

IRFR2405

Trans MOSFET N-CH Si 55V 56A 3-Pin(2+Tab) DPAK T/R
IRF420

IRF420

Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
IRL2203N

IRL2203N

N-Channel 30 V 116A (Tc) 180W (Tc) Through Hole TO-220AB
IRF220

IRF220

Trans MOSFET N-CH 200V 5A 3-Pin(2+Tab) TO-3
IRF7314

IRF7314

SOP-8 MOSFETs ROHS
IRF7341

IRF7341

Trans MOSFET N-CH Si 55V 4.7A 8-Pin SOIC T/R
IRLZ24N

IRLZ24N

Trans MOSFET N-CH 55V 18A 3-Pin(3+Tab) TO-220AB Tube
IRFR9N20D

IRFR9N20D

Power Field-Effect Transistor, 9.4A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3