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IRF7341

Trans MOSFET N-CH Si 55V 4.7A 8-Pin SOIC T/R

Quantity Unit Price(USD) Ext. Price
5 $0.144 $0.72
50 $0.125 $6.25
150 $0.117 $17.55
500 $0.106 $53.00
3000 $0.101 $303.00
6000 $0.098 $588.00

Inventory:6,311

*The price is for reference only.
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Quick Inquiry

Please submit RFQ for IRF7341 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of IRF7341

DescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.• Generation V Technology• Ultra Low On-Resistance• Dual N-Channel Mosfet• Surface Mount• Available in Tape & Reel• Dynamic dv/dt Rating• Fast Switching

Key Features

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code No Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP Part Package Code SOIC
Package Description SOP-8 Pin Count 8
Reach Compliance Code ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE Avalanche Energy Rating (Eas) 140 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE DS Breakdown Voltage-Min 55 V
Drain Current-Max (Abs) (ID) 4.7 A Drain Current-Max (ID) 5.1 A
Drain-source On Resistance-Max 0.05 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA JESD-30 Code R-PDSO-G8
JESD-609 Code e0 Moisture Sensitivity Level 1
Number of Elements 2 Number of Terminals 8
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2 W Pulsed Drain Current-Max (IDM) 42 A
Qualification Status Not Qualified Surface Mount YES
Terminal Finish TIN LEAD Terminal Form GULL WING
Terminal Position DUAL Transistor Application SWITCHING
Transistor Element Material SILICON

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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