IRFR9N20D
Power Field-Effect Transistor, 9.4A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
Inventory:8,598
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : IRFR9N20D
-
Package/Case : PAK
-
Brands : INFINEON
-
Components Categories : Power Field-Effect Transistors
-
Datesheet : IRFR9N20D DataSheet (PDF)
Overview of IRFR9N20D
Power Field-Effect Transistor, 9.4A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Rohs Code | No | Part Life Cycle Code | Transferred |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | Part Package Code | TO-252AA |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | Pin Count | 3 |
| Reach Compliance Code | compliant | ECCN Code | EAR99 |
| Avalanche Energy Rating (Eas) | 100 mJ | Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 200 V |
| Drain Current-Max (Abs) (ID) | 9.4 A | Drain Current-Max (ID) | 9.4 A |
| Drain-source On Resistance-Max | 0.38 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-252AA | JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e0 | Moisture Sensitivity Level | 1 |
| Number of Elements | 1 | Number of Terminals | 2 |
| Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 175 °C |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | 245 |
| Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 86 W |
| Pulsed Drain Current-Max (IDM) | 38 A | Qualification Status | Not Qualified |
| Surface Mount | YES | Terminal Finish | Tin/Lead (Sn/Pb) |
| Terminal Form | GULL WING | Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON | Polarity | N |
| RthJC max | 1.75 K/W | VDS max | 200.0 V |
| Mounting | SMD | Package | DPAK (TO-252) |
| Ptot max | 86.0 W | Tj max | 175.0 °C |
| VGS max | 30.0 V | RDS (on) max | 380.0 mΩ |
| VGS(th) max | 5.5 V | VGS(th) min | 3.0 V |
| ID max | 9.4 A |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, SF, UPS, or DHL.UPS, or DHL.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA, MasterCard, UnionPay, Western Union, PayPal, and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
Similar Product
IRFR2405
Trans MOSFET N-CH Si 55V 56A 3-Pin(2+Tab) DPAK T/R
IRF420
Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
IRL2203N
N-Channel 30 V 116A (Tc) 180W (Tc) Through Hole TO-220AB
IRF220
Trans MOSFET N-CH 200V 5A 3-Pin(2+Tab) TO-3
IRF7314
SOP-8 MOSFETs ROHS
IRF7341
Trans MOSFET N-CH Si 55V 4.7A 8-Pin SOIC T/R
IRLZ24N
Trans MOSFET N-CH 55V 18A 3-Pin(3+Tab) TO-220AB Tube
IRHM9160
Trans MOSFET P-CH 100V 35A 3-Pin(3+Tab) TO-254AA