• IRFS9N60APBF DPAK-3 (TO-252-3)
IRFS9N60APBF DPAK-3 (TO-252-3)

IRFS9N60APBF

Power Field-Effect Transistor

Inventory:8,099

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Overview of IRFS9N60APBF

N-Channel 600 V 9.2A (Tc) 170W (Tc) Surface Mount TO-263 (D2PAK)

Key Features

  • Low gate charge Qg results in simple drive requirement
  • Improved gate, avalanche and dynamic dV/dt ruggedness
  • Fully characterized capacitance and avalanche voltage and current

    • Application

    • oSwitch mode power supply (SMPS)
    • oUninterruptible power supply
    • oHigh speed power switching

    Specifications

    The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

    Product Category MOSFET RoHS Details
    REACH Details Technology Si
    Mounting Style SMD/SMT Package / Case DPAK-3 (TO-252-3)
    Transistor Polarity N-Channel Number of Channels 1 Channel
    Vds - Drain-Source Breakdown Voltage 600 V Id - Continuous Drain Current 9.2 A
    Rds On - Drain-Source Resistance 750 mOhms Vgs - Gate-Source Voltage - 30 V, + 30 V
    Vgs th - Gate-Source Threshold Voltage 2 V Qg - Gate Charge 49 nC
    Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
    Pd - Power Dissipation 170 W Channel Mode Enhancement
    Series IRFS Brand Vishay Semiconductors
    Configuration Single Height 4.83 mm
    Length 10.67 mm Product Type MOSFET
    Factory Pack Quantity 1000 Subcategory MOSFETs
    Width 9.65 mm Unit Weight 0.011640 oz

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