• IRFB18N50KPBF
IRFB18N50KPBF

IRFB18N50KPBF

TO-220 package MOSFET with 220W power dissipation capability

Quantity Unit Price(USD) Ext. Price
1 $2.073 $2.07
10 $1.968 $19.68
50 $1.906 $95.30
100 $1.843 $184.30
500 $1.667 $833.50
1000 $1.655 $1,655.00

Inventory:7,965

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Quick Inquiry

Please submit RFQ for IRFB18N50KPBF or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of IRFB18N50KPBF

N Channel Mosfet, 500V, 17A, To-220; Transistor Polarity:n Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:17A; On Resistance Rds(On):0.29Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: No

IRFB18N50KPBF

Key Features

  • Low gate charge Qg results in simple drive requirement
  • Improved gate, avalanche, and dynamic dV/dt ruggedness
  • Fully characterized capacitance and avalanche voltage and current
  • Low RDS(on)

    • Application

    • Power Management

    Specifications

    The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

    Product Category MOSFET RoHS Details
    REACH Details Technology Si
    Mounting Style Through Hole Package / Case TO-220-3
    Transistor Polarity N-Channel Number of Channels 1 Channel
    Vds - Drain-Source Breakdown Voltage 500 V Id - Continuous Drain Current 17 A
    Rds On - Drain-Source Resistance 290 mOhms Vgs - Gate-Source Voltage - 30 V, + 30 V
    Vgs th - Gate-Source Threshold Voltage 3 V Qg - Gate Charge 120 nC
    Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
    Pd - Power Dissipation 200 W Channel Mode Enhancement
    Series IRFB Brand Vishay Semiconductors
    Configuration Single Fall Time 30 ns
    Forward Transconductance - Min 6.4 S Height 15.49 mm
    Length 10.41 mm Product Type MOSFET
    Rise Time 60 ns Factory Pack Quantity 1000
    Subcategory MOSFETs Transistor Type 1 N-Channel
    Typical Turn-Off Delay Time 45 ns Typical Turn-On Delay Time 22 ns
    Width 4.7 mm Unit Weight 0.068784 oz

    Warranty & Returns

    Warranty, Returns, and Additional Information

    • QA & Return Policy

      Parts Quality Guarantee: 365 days

      Returns for refund: within 90 days

      Returns for Exchange: within 90 days

    • Shipping and Package

      Shipping:For example, FedEx, SF, UPS, or DHL.UPS, or DHL.

      Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

    • Payment

      For example, channels like VISA, MasterCard, UnionPay, Western Union, PayPal, and more.

      If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

    Similar Product

    IRFS9N60APBF

    IRFS9N60APBF

    Power Field-Effect Transistor
    IRFP460PBF

    IRFP460PBF

    N-channel MOSFET,IRFP460 20A 500V
    IRFP460LCPBF

    IRFP460LCPBF

    The IRFP460LCPBF is a TO-247AC-3 package MOSFET that complies with RoHS regulations
    IRFP264PBF

    IRFP264PBF

    Siliconix through-hole MOSFET
    IRFI840GPBF

    IRFI840GPBF

    This MOSFET is packaged in a TO-220F-3 form factor and is compliant with the ROHS directive
    IRF740PBF

    IRF740PBF

    Operating temperature range from -55 to +150 degrees Celsius, suitable for a variety of applications
    IRF830

    IRF830

    Trans MOSFET N-CH Si 500V 4.5A 3-Pin(3+Tab) TO-220AB
    IRFU014PBF

    IRFU014PBF

    Trans MOSFET N-CH 60V 7.7A 3-Pin(3+Tab) IPAK