IRF740PBF
Operating temperature range from -55 to +150 degrees Celsius, suitable for a variety of applications
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $0.508 | $0.51 |
10 | $0.421 | $4.21 |
50 | $0.342 | $17.10 |
100 | $0.300 | $30.00 |
500 | $0.274 | $137.00 |
1000 | $0.259 | $259.00 |
Inventory:7,366
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Part Number : IRF740PBF
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Package/Case : TO-220-3
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Brands : VISHAY
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : IRF740PBF DataSheet (PDF)
The IRF740PBF is a power MOSFET transistor designed for high-power applications. This N-channel transistor features a low on-resistance and high drain current, making it suitable for switching and amplification circuits that require high continuous current. (Note: The pin configuration below is a general representation. Please refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and usage of the IRF740PBF MOSFET for a better understanding of its application. Note: For detailed technical specifications, please refer to the IRF740PBF datasheet. Functionality The IRF740PBF MOSFET transistor provides high current handling capabilities and low on-resistance, enabling efficient power control and amplification in various electronic circuits. Usage Guide Q: Is the IRF740PBF suitable for high-frequency applications? For alternative power MOSFET options, consider the following:Overview of IRF740PBF
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: While the IRF740PBF offers fast switching speeds, it is more commonly used in applications that do not require high-frequency operation.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | Through Hole | Package / Case | TO-220-3 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 400 V | Id - Continuous Drain Current | 10 A |
Rds On - Drain-Source Resistance | 550 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 4 V | Qg - Gate Charge | 63 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 125 W | Channel Mode | Enhancement |
Series | IRF | Brand | Vishay Semiconductors |
Configuration | Single | Fall Time | 24 ns |
Height | 15.49 mm | Length | 10.41 mm |
Product Type | MOSFET | Rise Time | 27 ns |
Factory Pack Quantity | 1000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 50 ns |
Typical Turn-On Delay Time | 14 ns | Width | 4.7 mm |
Part # Aliases | IRF740PBF-BE3 SIHF740-E3 | Unit Weight | 0.068784 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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