IRFP264PBF
Siliconix through-hole MOSFET
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $1.724 | $1.72 |
10 | $1.582 | $15.82 |
25 | $1.350 | $33.75 |
100 | $1.259 | $125.90 |
500 | $1.219 | $609.50 |
1000 | $1.201 | $1,201.00 |
Inventory:8,273
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Part Number : IRFP264PBF
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Package/Case : TO-247-3
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Brands : VISHAY
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : IRFP264PBF DataSheet (PDF)
The IRFP264PBF is a power MOSFET transistor designed for high-power switching applications. It features a low
on-state resistance and high switching speed, making it suitable for power converters, motor control, and
other high-current applications. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise
details.) Include a circuit diagram illustrating the connections and operation of the IRFP264PBF MOSFET for a visual
representation. Note: For detailed technical specifications, please refer to the IRFP264PBF datasheet. Functionality The IRFP264PBF is a power MOSFET transistor that excels in high-power switching scenarios, offering low
resistance and fast switching speed for efficient performance in various applications. Usage Guide Q: What is the maximum power handling capacity of the IRFP264PBF? Q: Is the IRFP264PBF suitable for high-frequency switching applications? For similar functionalities, consider these alternatives to the IRFP264PBF:Overview of IRFP264PBF
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The IRFP264PBF can
handle power levels up to X watts, based on operating conditions and thermal management.
A: The IRFP264PBF
is optimized for high-power applications with moderate switching frequencies. For high-frequency operations,
consider MOSFETs specifically designed for fast switching.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | Through Hole | Package / Case | TO-247-3 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 250 V | Id - Continuous Drain Current | 38 A |
Rds On - Drain-Source Resistance | 75 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 2 V | Qg - Gate Charge | 210 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 280 W | Channel Mode | Enhancement |
Series | IRFP | Brand | Vishay Semiconductors |
Configuration | Single | Fall Time | 92 ns |
Forward Transconductance - Min | 20 S | Product Type | MOSFET |
Rise Time | 99 ns | Factory Pack Quantity | 500 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 110 ns | Typical Turn-On Delay Time | 22 ns |
Unit Weight | 0.211644 oz |
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