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G3R75MT12K

Silicon Carbide MOSFET N Channel Enhancement Mode

Inventory:7,812

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Overview of G3R75MT12K

Sic Mosfet, N-Ch, 1.2Kv, 41A, 207W; Mosfet Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:41A; Drain Source Voltage Vds:1.2Kv; No. Of Pins:4Pins; Rds(On) Test Voltage:15V; Power Dissipation:207W Rohs Compliant: Yes |Genesic Semiconductor G3R75MT12K

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series G3R™ Package Tube
Product Status Active FET Type N-Channel
Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 41A (Tc) Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 90mOhm @ 20A, 15V Vgs(th) (Max) @ Id 2.69V @ 7.5mA
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 15 V Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 1560 pF @ 800 V Power Dissipation (Max) 207W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole
Supplier Device Package TO-247-4 Package / Case TO-247-4
Base Product Number G3R75

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