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G3R75MT12J

Silicon Carbide MOSFET N Channel Enhancement Mode

Inventory:6,864

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Overview of G3R75MT12J

N-Channel 1200 V 42A (Tc) 224W (Tc) Surface Mount TO-263-7

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series G3R™ Package Tube
Product Status Obsolete FET Type N-Channel
Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 42A (Tc) Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 90mOhm @ 20A, 15V Vgs(th) (Max) @ Id 2.69V @ 7.5mA
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 15 V Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 1560 pF @ 800 V Power Dissipation (Max) 224W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount
Supplier Device Package TO-263-7 Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Base Product Number G3R75

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

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