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G3R40MT12K

MOSFET 1200V 40mO TO-247-4 G3R SiC MOSFET

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Overview of G3R40MT12K

Sic Mosfet, N-Ch, 1.2Kv, 71A, 333W; Mosfet Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:71A; Drain Source Voltage Vds:1.2Kv; No. Of Pins:4Pins; Rds(On) Test Voltage:15V; Power Dissipation:333W Rohs Compliant: Yes |Genesic Semiconductor G3R40MT12K

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer GeneSiC Semiconductor Product Category MOSFET
RoHS Details Technology SiC
Mounting Style Through Hole Package / Case TO-247-4
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 1.2 kV Id - Continuous Drain Current 55 A
Rds On - Drain-Source Resistance 40 mOhms Vgs - Gate-Source Voltage - 5 V, + 15 V
Vgs th - Gate-Source Threshold Voltage 2.7 V Qg - Gate Charge 88 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 228 W Channel Mode Enhancement
Series G3R Brand GeneSiC Semiconductor
Configuration Single Fall Time 12 ns
Forward Transconductance - Min 16.1 S Product MOSFET
Product Type MOSFET Rise Time 22 ns
Factory Pack Quantity 30 Subcategory MOSFETs
Transistor Type MOSFET Type SiC MOSFET
Typical Turn-Off Delay Time 27 ns Typical Turn-On Delay Time 29 ns
Unit Weight 0.211644 oz

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